Athermal recrystallization behavior of (Sn) solid-solution at an intermetallic-free Cu/Sn interface induced by room temperature electromigration

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Abstract

The present study, for the first time, revealed the athermal recrystallization behavior at a heterogeneous metallic interface using room temperature electromigration. The athermal recrystallization occurred within the meta-stable amorphous Cu-Sn interphase, which was formed during the early stage electromigration, for stress relaxation after further electromigration. The nano-scale polycrystalline (Sn) interphase was favorably recrystallized at the intermetallic-free Cu/Sn interface where the current crowding effect occurred. Athermal electromigration force facilitated the nucleation of Sn nuclei through the kinetic energy provided by the electron momentum transfer. The formation of the recrystallized (Sn) interphase is believed to be an intermediate material interaction product prior to further intermetallic nucleation under room temperature electromigration.

Original languageEnglish
Pages (from-to)607-610
Number of pages4
JournalMaterials Letters
Volume236
DOIs
Publication statusPublished - 2019 Feb 1

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Electromigration
electromigration
Intermetallics
intermetallics
Solid solutions
solid solutions
room temperature
Nucleation
Temperature
nucleation
crowding
Momentum transfer
stress relaxation
Stress relaxation
Kinetic energy
momentum transfer
kinetic energy
nuclei
Electrons
products

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Athermal recrystallization behavior of (Sn) solid-solution at an intermetallic-free Cu/Sn interface induced by room temperature electromigration",
abstract = "The present study, for the first time, revealed the athermal recrystallization behavior at a heterogeneous metallic interface using room temperature electromigration. The athermal recrystallization occurred within the meta-stable amorphous Cu-Sn interphase, which was formed during the early stage electromigration, for stress relaxation after further electromigration. The nano-scale polycrystalline (Sn) interphase was favorably recrystallized at the intermetallic-free Cu/Sn interface where the current crowding effect occurred. Athermal electromigration force facilitated the nucleation of Sn nuclei through the kinetic energy provided by the electron momentum transfer. The formation of the recrystallized (Sn) interphase is believed to be an intermediate material interaction product prior to further intermetallic nucleation under room temperature electromigration.",
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T1 - Athermal recrystallization behavior of (Sn) solid-solution at an intermetallic-free Cu/Sn interface induced by room temperature electromigration

AU - Liang, Chien Lung

AU - Lin, Kwang Lung

PY - 2019/2/1

Y1 - 2019/2/1

N2 - The present study, for the first time, revealed the athermal recrystallization behavior at a heterogeneous metallic interface using room temperature electromigration. The athermal recrystallization occurred within the meta-stable amorphous Cu-Sn interphase, which was formed during the early stage electromigration, for stress relaxation after further electromigration. The nano-scale polycrystalline (Sn) interphase was favorably recrystallized at the intermetallic-free Cu/Sn interface where the current crowding effect occurred. Athermal electromigration force facilitated the nucleation of Sn nuclei through the kinetic energy provided by the electron momentum transfer. The formation of the recrystallized (Sn) interphase is believed to be an intermediate material interaction product prior to further intermetallic nucleation under room temperature electromigration.

AB - The present study, for the first time, revealed the athermal recrystallization behavior at a heterogeneous metallic interface using room temperature electromigration. The athermal recrystallization occurred within the meta-stable amorphous Cu-Sn interphase, which was formed during the early stage electromigration, for stress relaxation after further electromigration. The nano-scale polycrystalline (Sn) interphase was favorably recrystallized at the intermetallic-free Cu/Sn interface where the current crowding effect occurred. Athermal electromigration force facilitated the nucleation of Sn nuclei through the kinetic energy provided by the electron momentum transfer. The formation of the recrystallized (Sn) interphase is believed to be an intermediate material interaction product prior to further intermetallic nucleation under room temperature electromigration.

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