Abstract
The present study, for the first time, revealed the athermal recrystallization behavior at a heterogeneous metallic interface using room temperature electromigration. The athermal recrystallization occurred within the meta-stable amorphous Cu-Sn interphase, which was formed during the early stage electromigration, for stress relaxation after further electromigration. The nano-scale polycrystalline (Sn) interphase was favorably recrystallized at the intermetallic-free Cu/Sn interface where the current crowding effect occurred. Athermal electromigration force facilitated the nucleation of Sn nuclei through the kinetic energy provided by the electron momentum transfer. The formation of the recrystallized (Sn) interphase is believed to be an intermediate material interaction product prior to further intermetallic nucleation under room temperature electromigration.
| Original language | English |
|---|---|
| Pages (from-to) | 607-610 |
| Number of pages | 4 |
| Journal | Materials Letters |
| Volume | 236 |
| DOIs | |
| Publication status | Published - 2019 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Athermal recrystallization behavior of (Sn) solid-solution at an intermetallic-free Cu/Sn interface induced by room temperature electromigration. / Liang, Chien Lung; Lin, Kwang-Lung.
In: Materials Letters, Vol. 236, 01.02.2019, p. 607-610.Research output: Contribution to journal › Article
TY - JOUR
T1 - Athermal recrystallization behavior of (Sn) solid-solution at an intermetallic-free Cu/Sn interface induced by room temperature electromigration
AU - Liang, Chien Lung
AU - Lin, Kwang-Lung
PY - 2019/2/1
Y1 - 2019/2/1
N2 - The present study, for the first time, revealed the athermal recrystallization behavior at a heterogeneous metallic interface using room temperature electromigration. The athermal recrystallization occurred within the meta-stable amorphous Cu-Sn interphase, which was formed during the early stage electromigration, for stress relaxation after further electromigration. The nano-scale polycrystalline (Sn) interphase was favorably recrystallized at the intermetallic-free Cu/Sn interface where the current crowding effect occurred. Athermal electromigration force facilitated the nucleation of Sn nuclei through the kinetic energy provided by the electron momentum transfer. The formation of the recrystallized (Sn) interphase is believed to be an intermediate material interaction product prior to further intermetallic nucleation under room temperature electromigration.
AB - The present study, for the first time, revealed the athermal recrystallization behavior at a heterogeneous metallic interface using room temperature electromigration. The athermal recrystallization occurred within the meta-stable amorphous Cu-Sn interphase, which was formed during the early stage electromigration, for stress relaxation after further electromigration. The nano-scale polycrystalline (Sn) interphase was favorably recrystallized at the intermetallic-free Cu/Sn interface where the current crowding effect occurred. Athermal electromigration force facilitated the nucleation of Sn nuclei through the kinetic energy provided by the electron momentum transfer. The formation of the recrystallized (Sn) interphase is believed to be an intermediate material interaction product prior to further intermetallic nucleation under room temperature electromigration.
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U2 - 10.1016/j.matlet.2018.11.034
DO - 10.1016/j.matlet.2018.11.034
M3 - Article
VL - 236
SP - 607
EP - 610
JO - Materials Letters
T2 - Materials Letters
JF - Materials Letters
SN - 0167-577X
ER -