Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee; Danny Chua; Riley E. Brandt; Sin Cheng Siah; Jian V. Li; Jonathan P. Mailoa; Sang Woon Lee; Roy G. Gordon; Tonio Buonassisi

doi:10.1002/adma.201401054

Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee, Danny Chua, Riley E. Brandt, Sin Cheng Siah, Jian V. Li, Jonathan P. Mailoa, Sang Woon Lee, Roy G. Gordon, Tonio Buonassisi

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

246 Citations (Scopus)

Abstract

The power conversion efficiency of solar cells based on copper (I) oxide (Cu₂O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga₂O₃) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

Original language	English
Pages (from-to)	4704-4710
Number of pages	7
Journal	Advanced Materials
Volume	26
Issue number	27
DOIs	https://doi.org/10.1002/adma.201401054
Publication status	Published - 2014 Jul 16

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201401054

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title = "Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells",

abstract = "The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.",

author = "Lee, {Yun Seog} and Danny Chua and Brandt, {Riley E.} and Siah, {Sin Cheng} and Li, {Jian V.} and Mailoa, {Jonathan P.} and Lee, {Sang Woon} and Gordon, {Roy G.} and Tonio Buonassisi",

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T1 - Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

AU - Lee, Yun Seog

AU - Chua, Danny

AU - Brandt, Riley E.

AU - Siah, Sin Cheng

AU - Li, Jian V.

AU - Mailoa, Jonathan P.

AU - Lee, Sang Woon

AU - Gordon, Roy G.

AU - Buonassisi, Tonio

PY - 2014/7/16

Y1 - 2014/7/16

N2 - The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

AB - The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

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JO - Advanced Materials

JF - Advanced Materials

IS - 27

ER -

Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Abstract

All Science Journal Classification (ASJC) codes

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