Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee, Danny Chua, Riley E. Brandt, Sin Cheng Siah, Jian V. Li, Jonathan P. Mailoa, Sang Woon Lee, Roy G. Gordon, Tonio Buonassisi

Research output: Contribution to journalArticlepeer-review

184 Citations (Scopus)

Abstract

The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

Original languageEnglish
Pages (from-to)4704-4710
Number of pages7
JournalAdvanced Materials
Volume26
Issue number27
DOIs
Publication statusPublished - 2014 Jul 16

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells'. Together they form a unique fingerprint.

Cite this