Abstract
Direct evidence of the electronic configurations across domain walls in BiFeO3 is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109° domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm.
Original language | English |
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Pages (from-to) | 1530-1534 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 23 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2011 Apr 5 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering