Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches

Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Po An Chen, Jianping Shi, Junho Choi, Xiaoqin Li, Yanfeng Zhang, Meng-Hsueh Chiang, Jack C. Lee, Deji Akinwande

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22.6.1-22.6.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period18-12-0118-12-05

Fingerprint

switches
Switches
Data storage equipment
Monolayers
Sulfur
sulfur
molybdenum disulfides
Engineering research
Cutoff frequency
Insertion losses
insertion loss
Molybdenum
Vacancies
Metal ions
emerging
isolation
metal ions
Substitution reactions
cut-off
Physics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ge, R., Wu, X., Kim, M., Chen, P. A., Shi, J., Choi, J., ... Akinwande, D. (2019). Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 22.6.1-22.6.4). [8614602] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614602
Ge, Ruijing ; Wu, Xiaohan ; Kim, Myungsoo ; Chen, Po An ; Shi, Jianping ; Choi, Junho ; Li, Xiaoqin ; Zhang, Yanfeng ; Chiang, Meng-Hsueh ; Lee, Jack C. ; Akinwande, Deji. / Atomristors : Memory Effect in Atomically-thin Sheets and Record RF Switches. 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 22.6.1-22.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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title = "Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches",
abstract = "Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.",
author = "Ruijing Ge and Xiaohan Wu and Myungsoo Kim and Chen, {Po An} and Jianping Shi and Junho Choi and Xiaoqin Li and Yanfeng Zhang and Meng-Hsueh Chiang and Lee, {Jack C.} and Deji Akinwande",
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Ge, R, Wu, X, Kim, M, Chen, PA, Shi, J, Choi, J, Li, X, Zhang, Y, Chiang, M-H, Lee, JC & Akinwande, D 2019, Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614602, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 22.6.1-22.6.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 18-12-01. https://doi.org/10.1109/IEDM.2018.8614602

Atomristors : Memory Effect in Atomically-thin Sheets and Record RF Switches. / Ge, Ruijing; Wu, Xiaohan; Kim, Myungsoo; Chen, Po An; Shi, Jianping; Choi, Junho; Li, Xiaoqin; Zhang, Yanfeng; Chiang, Meng-Hsueh; Lee, Jack C.; Akinwande, Deji.

2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 22.6.1-22.6.4 8614602 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Chen, Po An

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AU - Zhang, Yanfeng

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Ge R, Wu X, Kim M, Chen PA, Shi J, Choi J et al. Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 22.6.1-22.6.4. 8614602. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2018.8614602