Abstract
Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-ZnTe. It was found that with a proper choice of Cr thickness, a low specific contact resistance of 2.0 × 106Ωcm2 can be achieved for Au/AuBe/Cr on p-ZnTe. It was also found that Zn outdiffusion will significantly degrade the electrical properties of the Au/AuBe contact on p-ZnTe when annealing temperature is above 300°C. Conversely, Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application.
Original language | English |
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Pages (from-to) | 321-322 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 37 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2001 Mar 1 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering