Au/AuBe/Cr contact to p-ZnTe

S. J. Chang, W. R. Chen, Y. K. Su, J. F. Chen, W. H. Lan, C. I. Chiang, W. J. Lin, Y. T. Cherng, C. H. Liu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-ZnTe. It was found that with a proper choice of Cr thickness, a low specific contact resistance of 2.0 × 106Ωcm2 can be achieved for Au/AuBe/Cr on p-ZnTe. It was also found that Zn outdiffusion will significantly degrade the electrical properties of the Au/AuBe contact on p-ZnTe when annealing temperature is above 300°C. Conversely, Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application.

Original languageEnglish
Pages (from-to)321-322
Number of pages2
JournalElectronics Letters
Issue number5
Publication statusPublished - 2001 Mar 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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