Autocatalytic Ni-Cu-P barrier between 51 In-49Sn solder and Al

Kwang-Lung Lin, Chun Jen Chen

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Autocatalytic Ni-Cu-P deposit was investigated as a barrier layer between 51In-49Sn solder and Aluminum conductor. The solder was coated on the Ni-Cu-P deposit by the dipping method. The In 3Ni 2 and In 27Ni 10 intermetallic compounds were formed between the barrier layer and the solder. The intermetallic compounds grew at a very limiting rate during heating at 80°C. The barrier function of the Ni-Cu-P deposit occurs through the formation of the intermetallic layers that inhibit the interdiffusion between the solder and the deposit. The Ni-Cu-P deposit also prevents the outward diffusion of the Al conductor.

Original languageEnglish
Pages (from-to)46-50
Number of pages5
JournalInternational Journal of Microcircuits and Electronic Packaging
Volume20
Issue number1
Publication statusPublished - 1997 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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