Autocatalytic Ni-Cu-P deposit was investigated as a barrier layer between 51In-49Sn solder and Aluminum conductor. The solder was coated on the Ni-Cu-P deposit by the dipping method. The In 3Ni 2 and In 27Ni 10 intermetallic compounds were formed between the barrier layer and the solder. The intermetallic compounds grew at a very limiting rate during heating at 80°C. The barrier function of the Ni-Cu-P deposit occurs through the formation of the intermetallic layers that inhibit the interdiffusion between the solder and the deposit. The Ni-Cu-P deposit also prevents the outward diffusion of the Al conductor.
|Number of pages||5|
|Journal||International Journal of Microcircuits and Electronic Packaging|
|Publication status||Published - 1997 Mar 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering