TY - JOUR
T1 - Average power handling capability on SiON thin film coplanar waveguide interconnections for MMICs
AU - Tai, Tzu Chun
AU - Wu, Hung Wei
AU - Wang, Sin Pei
AU - Hung, Cheng Yuan
AU - Tien, Wei Chen
AU - Wang, Yeong Her
N1 - Funding Information:
This work was supported in part by the Ministry of Science and Technology under Contracts 107-2622-E-168-002-CC3 and 107-2221-E-168-012-MY2. The authors would like to thank Metal Industries Research and Development Centre for providing related experimental equipment.
Funding Information:
This work was supported in part by the Ministry of Science and Technology under Contracts 107-2622-E-168-002-CC3 and 107-2221-E-168-012-MY2. The authors would like to thank Metal Industries Research and Development Centre for providing related experimental equipment.
Publisher Copyright:
© 2019, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/8/30
Y1 - 2019/8/30
N2 - In this study, we investigated the average power handling capability (APHC) of silicon-oxy-nitride (SiON) thin-film-coated coplanar waveguide (CPW) interconnections for monolithic microwave integrated circuits (MMICs). SiON thin films were prepared through very-high-frequency plasma-enhanced chemical vapor deposition at 40.68 MHz. Films prepared under various annealing conditions were studied. The microwave characteristics of CPW interconnections were analyzed for fitting to the International Technology Roadmap for Semiconductors. SiON thin films were annealed under a vacuum condition for 60 s at 700 °C, 900 °C and 1100 °C. The use of coated and annealed SiON thin films on the low-resistivity Si substrate effectively improved the substrate resistivity, reduced microwave attenuation at 1100 °C, and enhanced the APHC of CPW interconnections. These results indicate that the proposed method is suitable for application to MMICs.
AB - In this study, we investigated the average power handling capability (APHC) of silicon-oxy-nitride (SiON) thin-film-coated coplanar waveguide (CPW) interconnections for monolithic microwave integrated circuits (MMICs). SiON thin films were prepared through very-high-frequency plasma-enhanced chemical vapor deposition at 40.68 MHz. Films prepared under various annealing conditions were studied. The microwave characteristics of CPW interconnections were analyzed for fitting to the International Technology Roadmap for Semiconductors. SiON thin films were annealed under a vacuum condition for 60 s at 700 °C, 900 °C and 1100 °C. The use of coated and annealed SiON thin films on the low-resistivity Si substrate effectively improved the substrate resistivity, reduced microwave attenuation at 1100 °C, and enhanced the APHC of CPW interconnections. These results indicate that the proposed method is suitable for application to MMICs.
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U2 - 10.1007/s10854-019-01938-1
DO - 10.1007/s10854-019-01938-1
M3 - Article
AN - SCOPUS:85070226683
SN - 0957-4522
VL - 30
SP - 15599
EP - 15607
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 16
ER -