Back-Bias Modulated UTBB SOI for System-on-Chip I/O Cells

Ming Yu Chang, Po Yu Chao, Meng Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Laterally diffused MOSFET (LDMOS) using ultra-thin body and buried oxide (BOX) silicon-on-insulator (UTBB SOI) is demonstrated. The proposed back bias technique offers design flexibility and process simplicity. The same back-gate biases that are applied to core devices for multiple threshold voltage can be applied to LDMOS for optimal I/O cells without additional processes.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on Quality Electronic Design, ISQED 2021
PublisherIEEE Computer Society
Pages311-316
Number of pages6
ISBN (Electronic)9781728176413
DOIs
Publication statusPublished - 2021 Apr 7
Event22nd International Symposium on Quality Electronic Design, ISQED 2021 - Santa Clara, United States
Duration: 2021 Apr 72021 Apr 9

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2021-April
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference22nd International Symposium on Quality Electronic Design, ISQED 2021
Country/TerritoryUnited States
CitySanta Clara
Period21-04-0721-04-09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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