Abstract
The lifetime degradation of new multi-level cell (MLC) flash devices is becoming more and more serious due to the fast-increasing bit error rate variance among flash pages, where a flash chip consists of multiple blocks and each block consists of a fixed number of pages. Existing works usually discard bad pages in the unit of a block, but result in shortened the device lifetime due to the insufficient storage capacity. This issue is exacerbated when new MLC flash devices are adopted. In contrast to existing works, we propose a bad page relaxation scheme to ultimately extend the device lifetime by discarding bad pages in the unit of a page. The proposed scheme takes advantage of the high flexibility of page-level mapping strategies in reading/writing pages to avoid management overheads. The experiments were conducted based on representative realistic workloads to evaluate the efficacy of the proposed scheme, and the results are very encouraging.
| Original language | English |
|---|---|
| Title of host publication | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 715-716 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781479951451 |
| DOIs | |
| Publication status | Published - 2014 Feb 3 |
| Event | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan Duration: 2014 Oct 7 → 2014 Oct 10 |
Publication series
| Name | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 |
|---|
Other
| Other | 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 14-10-07 → 14-10-10 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Bad page relaxation to prolong the lifetime of flash devices. / Yang, Ming Chang; Kuan, Yuan Hung; Chang, Yuan Hao; Suei, Pei Lun; Tu, ChiaHeng; Chang, Norman.
2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 715-716 7031334 (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Bad page relaxation to prolong the lifetime of flash devices
AU - Yang, Ming Chang
AU - Kuan, Yuan Hung
AU - Chang, Yuan Hao
AU - Suei, Pei Lun
AU - Tu, ChiaHeng
AU - Chang, Norman
PY - 2014/2/3
Y1 - 2014/2/3
N2 - The lifetime degradation of new multi-level cell (MLC) flash devices is becoming more and more serious due to the fast-increasing bit error rate variance among flash pages, where a flash chip consists of multiple blocks and each block consists of a fixed number of pages. Existing works usually discard bad pages in the unit of a block, but result in shortened the device lifetime due to the insufficient storage capacity. This issue is exacerbated when new MLC flash devices are adopted. In contrast to existing works, we propose a bad page relaxation scheme to ultimately extend the device lifetime by discarding bad pages in the unit of a page. The proposed scheme takes advantage of the high flexibility of page-level mapping strategies in reading/writing pages to avoid management overheads. The experiments were conducted based on representative realistic workloads to evaluate the efficacy of the proposed scheme, and the results are very encouraging.
AB - The lifetime degradation of new multi-level cell (MLC) flash devices is becoming more and more serious due to the fast-increasing bit error rate variance among flash pages, where a flash chip consists of multiple blocks and each block consists of a fixed number of pages. Existing works usually discard bad pages in the unit of a block, but result in shortened the device lifetime due to the insufficient storage capacity. This issue is exacerbated when new MLC flash devices are adopted. In contrast to existing works, we propose a bad page relaxation scheme to ultimately extend the device lifetime by discarding bad pages in the unit of a page. The proposed scheme takes advantage of the high flexibility of page-level mapping strategies in reading/writing pages to avoid management overheads. The experiments were conducted based on representative realistic workloads to evaluate the efficacy of the proposed scheme, and the results are very encouraging.
UR - http://www.scopus.com/inward/record.url?scp=84946686059&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946686059&partnerID=8YFLogxK
U2 - 10.1109/GCCE.2014.7031334
DO - 10.1109/GCCE.2014.7031334
M3 - Conference contribution
T3 - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
SP - 715
EP - 716
BT - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -