Band anticrossing in InGaPN alloys induced by N-related localized states

K. I. Lin; J. S. Hwang

doi:10.1063/1.2387972

Band anticrossing in InGaPN alloys induced by N-related localized states

K. I. Lin, J. S. Hwang

Education and Research Group

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN.

Original language	English
Article number	192116
Journal	Applied Physics Letters
Volume	89
Issue number	19
DOIs	https://doi.org/10.1063/1.2387972
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2387972

Cite this

@article{b632e4e2e347472a949306925f65a8dc,

title = "Band anticrossing in InGaPN alloys induced by N-related localized states",

abstract = "Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN.",

author = "Lin, {K. I.} and Hwang, {J. S.}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC94-2112-M-006-024.",

year = "2006",

doi = "10.1063/1.2387972",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Band anticrossing in InGaPN alloys induced by N-related localized states

AU - Lin, K. I.

AU - Hwang, J. S.

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC94-2112-M-006-024.

PY - 2006

Y1 - 2006

N2 - Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN.

AB - Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN.

UR - http://www.scopus.com/inward/record.url?scp=33750917318&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750917318&partnerID=8YFLogxK

U2 - 10.1063/1.2387972

DO - 10.1063/1.2387972

M3 - Article

AN - SCOPUS:33750917318

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192116

ER -

Band anticrossing in InGaPN alloys induced by N-related localized states

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this