Band anticrossing in InGaPN alloys induced by N-related localized states

K. I. Lin, J. S. Hwang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN.

Original languageEnglish
Article number192116
JournalApplied Physics Letters
Volume89
Issue number19
DOIs
Publication statusPublished - 2006 Nov 16

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temperature dependence
temperature
electronics
interactions
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN.",
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Band anticrossing in InGaPN alloys induced by N-related localized states. / Lin, K. I.; Hwang, J. S.

In: Applied Physics Letters, Vol. 89, No. 19, 192116, 16.11.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Band anticrossing in InGaPN alloys induced by N-related localized states

AU - Lin, K. I.

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AB - Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN.

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