Band engineering magneto-resistance effect in Co:a-C films

P. Y. Chuang, Jung-Chun Huang, P. E. Lu, H. S. Hsu, S. J. Sun, Y. W. Yang, J. M. Chen, C. H. Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were deposited on quartz glass by radio frequency magnetron sputtering. A bias-dependent positive magnetoresistance (PMR) with a peak at a particular voltage was observed. The electronic structures were examined by ultraviolet photoelectron spectroscopy and X-ray absorption near edge spectroscopy. The spectroscopic results reveal that Co doping promotes the graphitization in the a-C matrix and the 3d orbital of Co is hybridized with sp2 states (DOSs) in the Co:a-C. The PMR effect is related to the modulation of the DOS of the Co:a-C films at the Fermi level by Zeeman splitting.

Original languageEnglish
Pages (from-to)821-825
Number of pages5
JournalCarbon
Volume81
Issue number1
DOIs
Publication statusPublished - 2015 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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