TY - JOUR
T1 - Band offset of vanadium-doped molybdenum oxide hole transport layer in organic photovoltaics
AU - Chang, Feng Kuei
AU - Huang, Yi Chi
AU - Jeng, Jiann Shing
AU - Chen, Jen Sue
N1 - Funding Information:
We would like to appreciate the financial support from the Ministry of Science and Technology of Taiwan (Grant Nos. MOST 102-2221-E-006-071-MY3 , MOST 102-2221-E-024-021-MY3 , and MOST 103-2221-E-006-086-MY3 ).
Publisher Copyright:
© 2016 Elsevier Ltd.
PY - 2016/8/1
Y1 - 2016/8/1
N2 - Solution-processed vanadium-doped molybdenum oxide films (V)MoOx films with mole ratios of Mo:V = 1:0, 1:0.05, 1:0.2, 1:0.5, 0:1, are fabricated as hole transport layer (HTL) in organic photovoltaics with active layer blend comprising poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). The device structure is ITO/(V)MoOx/P3HT:PCBM/ZnO NP/Al, and the working area is 0.16 cm2. The result shows that the device using V0.05MoOx HTL has the best performance, including power conversion efficiency of 2.16%, Voc of 0.6 V, Jsc of 6.93 mA/cm2, and FF of 51.9%. Using ultraviolet photoelectron spectroscopy (UPS), we can define the energy levels of valence band edge and Fermi level of (V)MoOx films. UPS analysis indicates that V0.05MoOx has the smallest energy band offset between its valence band edge to the HOMO of P3HT, which is advantageous for hole transporting from P3HT to ITO anode via the V0.05MoOx HTL. In addition, V0.05MoOx film shows the lowest electrical resistivity among all (V)MoOx films, which is further beneficial for hole transportation.
AB - Solution-processed vanadium-doped molybdenum oxide films (V)MoOx films with mole ratios of Mo:V = 1:0, 1:0.05, 1:0.2, 1:0.5, 0:1, are fabricated as hole transport layer (HTL) in organic photovoltaics with active layer blend comprising poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). The device structure is ITO/(V)MoOx/P3HT:PCBM/ZnO NP/Al, and the working area is 0.16 cm2. The result shows that the device using V0.05MoOx HTL has the best performance, including power conversion efficiency of 2.16%, Voc of 0.6 V, Jsc of 6.93 mA/cm2, and FF of 51.9%. Using ultraviolet photoelectron spectroscopy (UPS), we can define the energy levels of valence band edge and Fermi level of (V)MoOx films. UPS analysis indicates that V0.05MoOx has the smallest energy band offset between its valence band edge to the HOMO of P3HT, which is advantageous for hole transporting from P3HT to ITO anode via the V0.05MoOx HTL. In addition, V0.05MoOx film shows the lowest electrical resistivity among all (V)MoOx films, which is further beneficial for hole transportation.
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U2 - 10.1016/j.sse.2016.04.014
DO - 10.1016/j.sse.2016.04.014
M3 - Article
AN - SCOPUS:84967006264
SN - 0038-1101
VL - 122
SP - 18
EP - 22
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -