Abstract
Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi, conflicting with the theoretical results. To address this issue, we studied the band structure of Bi and Sb films by ARPES and first-principles calculations. The quantum confinement effectively enlarges the energy gap in the band structure of Bi films and enables a direct visualization of the ℤ2 topological invariant of Bi. We find that Bi quantum films in topologically trivial and nontrivial phases respond differently to surface perturbations. This way, we establish experimental criteria for detecting the band topology of Bi by spectroscopic methods.
| Original language | English |
|---|---|
| Article number | 510 |
| Journal | Crystals |
| Volume | 9 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2019 Oct |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Condensed Matter Physics
- Inorganic Chemistry
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Band topology of bismuth quantum films. / Chang, Tay Rong; Lu, Qiangsheng; Wang, Xiaoxiong; Lin, Hsin; Miller, T.; Chiang, Tai Chang; Bian, Guang.
In: Crystals, Vol. 9, No. 10, 510, 10.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Band topology of bismuth quantum films
AU - Chang, Tay Rong
AU - Lu, Qiangsheng
AU - Wang, Xiaoxiong
AU - Lin, Hsin
AU - Miller, T.
AU - Chiang, Tai Chang
AU - Bian, Guang
PY - 2019/10
Y1 - 2019/10
N2 - Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi, conflicting with the theoretical results. To address this issue, we studied the band structure of Bi and Sb films by ARPES and first-principles calculations. The quantum confinement effectively enlarges the energy gap in the band structure of Bi films and enables a direct visualization of the ℤ2 topological invariant of Bi. We find that Bi quantum films in topologically trivial and nontrivial phases respond differently to surface perturbations. This way, we establish experimental criteria for detecting the band topology of Bi by spectroscopic methods.
AB - Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi, conflicting with the theoretical results. To address this issue, we studied the band structure of Bi and Sb films by ARPES and first-principles calculations. The quantum confinement effectively enlarges the energy gap in the band structure of Bi films and enables a direct visualization of the ℤ2 topological invariant of Bi. We find that Bi quantum films in topologically trivial and nontrivial phases respond differently to surface perturbations. This way, we establish experimental criteria for detecting the band topology of Bi by spectroscopic methods.
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U2 - 10.3390/cryst9100510
DO - 10.3390/cryst9100510
M3 - Article
AN - SCOPUS:85073502706
VL - 9
JO - Crystals
JF - Crystals
SN - 2073-4352
IS - 10
M1 - 510
ER -