Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors

Ting Hao Chang, Shoou Jinn Chang, C. J. Chiu, Chih Yu Wei, Yen Ming Juan, Wen Yin Weng

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ∼105 and 0.18 A/W.

Original languageEnglish
Article number7041161
Pages (from-to)915-918
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number8
Publication statusPublished - 2015 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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