Bandgap engineered ultraviolet photodetectors with gallium-zinc-oxide via co-sputtering method

C. P. Yang, S. P. Chang, S. J. Chang, S. X. Chen, M. H. Hsu, W. J. Tung, W. L. Huang, T. H. Chang, C. J. Chiu, W. Y. Weng

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4 Citations (Scopus)


The authors report the fabrication of gallium-zinc-oxide (GZO)MSM ultraviolet photodetectors (PDs) via co-sputtering using Ga2O3 and ZnO targets. The cutoff wavelength of the fabricated PDs is changed by adjusting the radio frequency power of the ZnO target during the co-sputtering procedure. The GZO thin films are investigated via physical analysis, such as atomic force microscopy, absorption coefficient spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the smooth GZO thin films are composed of a wide-gap semiconductor and a clearly n-type material. With a 10-V applied bias, the corresponding IPhoto/IDark ratios for three devices labeled A, B, and C are 1.4 × 103, 9.3 × 102, and 2.7 × 103, respectively. Under corresponding cutoff wavelengths with a 0.2-V applied bias, the responsivity values are 2.7 × 10-6, 9 × 10-6, and 1.5 × 10-4 for devices A, B, and C, respectively. Thus, these GZO ultraviolet PDs not only have a simple and low-cost fabrication process but also are suitable for ultraviolet sensing application owing to their outstanding electro-optical properties.

Original languageEnglish
Pages (from-to)Q3083-Q3088
JournalECS Journal of Solid State Science and Technology
Issue number7
Publication statusPublished - 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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