Bandgap engineering of well-aligned Zn1 - xMgxO nanorods grown by metalorganic chemical vapor deposition

Chen Hao Ku, Hsuen Han Chiang, Jih Jen Wu

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38 Citations (Scopus)


Well-aligned Zn1 - xMgxO nanorods (x = 0-0.165) have been grown on Si(0 0 1) substrates using metalorganic chemical vapor deposition. Structural analyses indicate that the nanorods grown on Si substrates are oriented in the c-axis direction and the nanorod possesses the single-crystalline hexagonal structure. No phase separation is observed when the Mg content (x) is increased to 0.165. The c-axis constant of the Zn 1 - xMgxO nanorod decreases with increasing Mg content. The PL emission energies of the Zn1 - xMgxO nanorods measured at room temperature increase monotonically with the Mg contents.

Original languageEnglish
Pages (from-to)132-135
Number of pages4
JournalChemical Physics Letters
Issue number1-3
Publication statusPublished - 2005 Mar 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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