Bandgap enhanced random laser

Shih-hui Chang, Seng Tiong Ho, Y. Ling, Hui Cao, E. Seeling, X. Liu, R. P.H. Chang

Research output: Contribution to conferencePaper

Abstract

The size of the lasing states in ordered, partially ordered, and completely disordered systems were compared. As such, the spatial profile and dwell time of the localized states with the finite-difference time-domain (FDTD) method was calculated. By comparing the numerical results with the experimental data, the lasing threshold was reduced due to the effect of photonic bandgap on random laser.

Original languageEnglish
Pages1-2
Number of pages2
Publication statusPublished - 2002 Jan 1
EventQuantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States
Duration: 2002 May 192002 May 24

Other

OtherQuantum Electronics and Laser Science (QELS) 2002
CountryUnited States
CityLong Beach, CA
Period02-05-1902-05-24

Fingerprint

lasing
dwell
finite difference time domain method
lasers
photonics
thresholds
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chang, S., Ho, S. T., Ling, Y., Cao, H., Seeling, E., Liu, X., & Chang, R. P. H. (2002). Bandgap enhanced random laser. 1-2. Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States.
Chang, Shih-hui ; Ho, Seng Tiong ; Ling, Y. ; Cao, Hui ; Seeling, E. ; Liu, X. ; Chang, R. P.H. / Bandgap enhanced random laser. Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States.2 p.
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Chang, S, Ho, ST, Ling, Y, Cao, H, Seeling, E, Liu, X & Chang, RPH 2002, 'Bandgap enhanced random laser' Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States, 02-05-19 - 02-05-24, pp. 1-2.

Bandgap enhanced random laser. / Chang, Shih-hui; Ho, Seng Tiong; Ling, Y.; Cao, Hui; Seeling, E.; Liu, X.; Chang, R. P.H.

2002. 1-2 Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Bandgap enhanced random laser

AU - Chang, Shih-hui

AU - Ho, Seng Tiong

AU - Ling, Y.

AU - Cao, Hui

AU - Seeling, E.

AU - Liu, X.

AU - Chang, R. P.H.

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N2 - The size of the lasing states in ordered, partially ordered, and completely disordered systems were compared. As such, the spatial profile and dwell time of the localized states with the finite-difference time-domain (FDTD) method was calculated. By comparing the numerical results with the experimental data, the lasing threshold was reduced due to the effect of photonic bandgap on random laser.

AB - The size of the lasing states in ordered, partially ordered, and completely disordered systems were compared. As such, the spatial profile and dwell time of the localized states with the finite-difference time-domain (FDTD) method was calculated. By comparing the numerical results with the experimental data, the lasing threshold was reduced due to the effect of photonic bandgap on random laser.

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M3 - Paper

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Chang S, Ho ST, Ling Y, Cao H, Seeling E, Liu X et al. Bandgap enhanced random laser. 2002. Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States.