Barium titanate nickelate (BTN) nanorod (NR)-based resistive random access memory (RRAM) has been demonstrated by using the hydrothermal method. The prepared BTN NR materials have the advantages of ease of fabrication, low temperature application, ability to grow various materials, and relative cost effectiveness. In addition, the BTN NR-based RRAM displayed a highly repeatable and forming-free bipolar resistive switching behavior with an ON/OFF ratio of over 105. The resistive switching behavior may be related to the oxygen vacancies on the surface of the BTN NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned BTN NR. Compared to its counterpart of BTN thin film, superior reproducibility was also observed, demonstrating that the nanostructured material provides an effective way to improve the memory properties.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry