Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application

Yu An Li, Ke Jing Lee, Li Wen Wang, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Barium titanate nickelate (BTN) nanorod (NR)-based resistive random access memory (RRAM) has been demonstrated by using the hydrothermal method. The prepared BTN NR materials have the advantages of ease of fabrication, low temperature application, ability to grow various materials, and relative cost effectiveness. In addition, the BTN NR-based RRAM displayed a highly repeatable and forming-free bipolar resistive switching behavior with an ON/OFF ratio of over 105. The resistive switching behavior may be related to the oxygen vacancies on the surface of the BTN NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned BTN NR. Compared to its counterpart of BTN thin film, superior reproducibility was also observed, demonstrating that the nanostructured material provides an effective way to improve the memory properties.

Original languageEnglish
Pages (from-to)2083-2089
Number of pages7
JournalJournal of Electronic Materials
Volume50
Issue number4
DOIs
Publication statusPublished - 2021 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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