TY - JOUR
T1 - Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors
AU - Lee, Cheng Jung
AU - Lee, Ke Jing
AU - Chang, Yu Chi
AU - Wang, Li Wen
AU - Chou, Der Wei
AU - Wang, Yeong Her
N1 - Funding Information:
Manuscript received November 10, 2017; revised December 17, 2017; accepted December 19, 2017. Date of current version January 22, 2018. This work was supported by the Ministry of Science and Technology of Taiwan under Contract NSC101-2221-E-006-141-MY3, Contract NSC102-2221-E-006-182-MY3, and Contract MOST 105-2221-E-006-193-MY3. The review of this paper was arranged by Editor H. Klauk. (Corresponding author: Yeong-Her Wang.) C-J. Lee, K-J. Lee, Y-C. Chang, L-W. Wang, and Y-H. Wang are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan (e-mail: [email protected]).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2018/2
Y1 - 2018/2
N2 - High-κ barium zirconate nickelate (BZN) gate dielectric layer was prepared through the low-Temperature sol-gel method and was used in pentacene-based organic thin-film transistor (OTFT) applications. In comparison with its barium zirconate oxide (BZO) counterpart, experimental results show that the threshold voltage of the BZN-based OTFTs decreases from-2 to-1.1 V, the gate leakage decreases from 10-8 to 10-12 A, the carrier mobility increases from 2.1 to 5.2 cm2/Vs, and the subthreshold swing decreases from 2.4 to 0.4 V/decade. The effect of Ni on device characteristics is discussed in this paper. Ni(II) acetylacetone possesses two pairs of symmetrical bidentate ligands, which can chelate with Zr ion to smoothen surface roughness. The dielectric constant can be increased. The enhancement of mobility is partly attributed to the smoother surface to reduce the scattering effects of the carrier. In addition, the improved film quality may also increase the barrier height and reduce the leakage current, which enhances the ON/ OFF ratio through the chelate effect due to the addition of Ni in BZO. Furthermore, excellent operation stability can be achieved.
AB - High-κ barium zirconate nickelate (BZN) gate dielectric layer was prepared through the low-Temperature sol-gel method and was used in pentacene-based organic thin-film transistor (OTFT) applications. In comparison with its barium zirconate oxide (BZO) counterpart, experimental results show that the threshold voltage of the BZN-based OTFTs decreases from-2 to-1.1 V, the gate leakage decreases from 10-8 to 10-12 A, the carrier mobility increases from 2.1 to 5.2 cm2/Vs, and the subthreshold swing decreases from 2.4 to 0.4 V/decade. The effect of Ni on device characteristics is discussed in this paper. Ni(II) acetylacetone possesses two pairs of symmetrical bidentate ligands, which can chelate with Zr ion to smoothen surface roughness. The dielectric constant can be increased. The enhancement of mobility is partly attributed to the smoother surface to reduce the scattering effects of the carrier. In addition, the improved film quality may also increase the barrier height and reduce the leakage current, which enhances the ON/ OFF ratio through the chelate effect due to the addition of Ni in BZO. Furthermore, excellent operation stability can be achieved.
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U2 - 10.1109/TED.2017.2786225
DO - 10.1109/TED.2017.2786225
M3 - Article
AN - SCOPUS:85040622395
SN - 0018-9383
VL - 65
SP - 680
EP - 686
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 2
M1 - 8252755
ER -