Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

K. F. Yarn; Y. H. Wang; M. S. Chen

doi:10.1016/0921-5107(95)01402-0

Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

K. F. Yarn, Y. H. Wang, M. S. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Materials Science and Engineering B
Volume	35
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(95)01402-0
Publication status	Published - 1995 Dec

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

@article{b4446e7b0f1d4f3f8158b2fdae0b1a8f,

title = "Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy",

abstract = "We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.",

author = "Yarn, {K. F.} and Wang, {Y. H.} and Chen, {M. S.}",

year = "1995",

month = dec,

doi = "10.1016/0921-5107(95)01402-0",

language = "English",

volume = "35",

pages = "29--33",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

AU - Yarn, K. F.

AU - Wang, Y. H.

AU - Chen, M. S.

PY - 1995/12

Y1 - 1995/12

N2 - We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.

AB - We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.

UR - http://www.scopus.com/inward/record.url?scp=0029488696&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029488696&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(95)01402-0

DO - 10.1016/0921-5107(95)01402-0

M3 - Article

AN - SCOPUS:0029488696

SN - 0921-5107

VL - 35

SP - 29

EP - 33

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

Abstract

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