Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

K. F. Yarn, Y. H. Wang, M. S. Chen

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalMaterials Science and Engineering B
Volume35
Issue number1-3
DOIs
Publication statusPublished - 1995 Dec

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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