Beneficial effect of post-deposition treatment in high-efficiency Cu(In,Ga)Se2 solar cells through reduced potential fluctuations

S. A. Jensen, S. Glynn, A. Kanevce, P. Dippo, J. V. Li, D. H. Levi, D. Kuciauskas

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


World-record power conversion efficiencies for Cu(In,Ga)Se2 (CIGS) solar cells have been achieved via a post-deposition treatment with alkaline metals, which increases the open-circuit voltage and fill factor. We explore the role of the potassium fluoride (KF) post-deposition treatment in CIGS by employing energy- and time-resolved photoluminescence spectroscopy and electrical characterization combined with numerical modeling. The bulk carrier lifetime is found to increase with post-deposition treatment from 255 ns to 388 ns, which is the longest charge carrier lifetime reported for CIGS, and within ∼40% of the radiative limit. We find evidence that the post-deposition treatment causes a decrease in the electronic potential fluctuations. These potential fluctuations have previously been shown to reduce the open-circuit voltage and the device efficiency in CIGS. Additionally, numerical simulations based on the measured carrier lifetimes and mobilities show a diffusion length of ∼10 μm, which is ∼4 times larger than the film thickness. Thus, carrier collection in the bulk is not a limiting factor for device efficiency. By considering differences in doping, bandgap, and potential fluctuations, we present a possible explanation for the voltage difference between KF-treated and untreated samples.

Original languageEnglish
Article number063106
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2016 Aug 14

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Beneficial effect of post-deposition treatment in high-efficiency Cu(In,Ga)Se<sub>2</sub> solar cells through reduced potential fluctuations'. Together they form a unique fingerprint.

Cite this