Beta-gallium oxide nanowire extended gate field effect transistor pH sensors prepared using furnace-oxidized gallium nitride thin films

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Abstract

The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.

Original languageEnglish
Pages (from-to)914-917
Number of pages4
JournalNanoscience and Nanotechnology Letters
Volume6
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

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pH sensors
Gates (transistor)
Gallium nitride
Gallium
Nanowires
Furnaces
Thin films
Oxides
gallium nitride
gallium oxide
Vapors
Single crystals
Liquids

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.",
author = "Sheng-Po Chang and Kuan-Jen Chen",
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AU - Chen, Kuan-Jen

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N2 - The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.

AB - The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.

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