Beta-gallium oxide nanowire extended gate field effect transistor pH sensors prepared using furnace-oxidized gallium nitride thin films

Sheng Po Chang; Kuan Jen Chen

doi:10.1166/nnl.2014.1848

Beta-gallium oxide nanowire extended gate field effect transistor pH sensors prepared using furnace-oxidized gallium nitride thin films

Sheng Po Chang
, Kuan Jen Chen

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The structural characteristics of Ga₂O₃ nanowires and the sensitivity of Ga₂O₃ extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga₂O₃ nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga₂O₃ phase and single crystals. The β-Ga₂O₃ nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga₂O₃ nanowires exhibits high detection of properties (14 μA · pH^-1). The β-Ga₂O₃ nanowires are a candidate material for pH sensor.

Original language	English
Pages (from-to)	914-917
Number of pages	4
Journal	Nanoscience and Nanotechnology Letters
Volume	6
Issue number	10
DOIs	https://doi.org/10.1166/nnl.2014.1848
Publication status	Published - 2014 Oct 1

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1166/nnl.2014.1848

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title = "Beta-gallium oxide nanowire extended gate field effect transistor pH sensors prepared using furnace-oxidized gallium nitride thin films",

abstract = "The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.",

author = "Chang, \{Sheng Po\} and Chen, \{Kuan Jen\}",

note = "Publisher Copyright: Copyright {\textcopyright} 2014 American Scientific Publishers",

year = "2014",

month = oct,

day = "1",

doi = "10.1166/nnl.2014.1848",

language = "English",

volume = "6",

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journal = "Nanoscience and Nanotechnology Letters",

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T1 - Beta-gallium oxide nanowire extended gate field effect transistor pH sensors prepared using furnace-oxidized gallium nitride thin films

AU - Chang, Sheng Po

AU - Chen, Kuan Jen

PY - 2014/10/1

Y1 - 2014/10/1

N2 - The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.

AB - The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.

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DO - 10.1166/nnl.2014.1848

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JO - Nanoscience and Nanotechnology Letters

JF - Nanoscience and Nanotechnology Letters

IS - 10

ER -

Beta-gallium oxide nanowire extended gate field effect transistor pH sensors prepared using furnace-oxidized gallium nitride thin films

Abstract

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