TY - JOUR
T1 - Bias-tunable multiple-transconductance with improved transport characteristics of δ-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/G aAs high electron mobility transistor using a graded superlattice spacer
AU - Lee, Ching Sung
AU - Hsu, Wei Chou
PY - 2003/4
Y1 - 2003/4
N2 - A δ-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/G aAs high electron mobility transistor (HEMT) with a thickness-graded superlattice spacer exhibiting bias-tunable multiple-transconductance performance has been successfully fabricated by molecular beam epitaxy (MBE). As compared to a conventional HEMT structure with a single undoped spacer layer, the present superlattice spacer, which accommodates the lattice-mismatch-induced strain, provides improvement of 31% and 43% on electron mobility and the two-dimensional electron gas (2DEG) concentration-mobility product, respectively. In addition, the device demonstrates bias-tunable multiple-transconductance plateaus due to modulation of the 2DEG concentration and mobility product by real-space transfer at high channel voltage. The distinguished device characteristics of the present structure are promising for a high-speed analog-to-digital converter (ADC) or multiple-state quantizer applications.
AB - A δ-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/G aAs high electron mobility transistor (HEMT) with a thickness-graded superlattice spacer exhibiting bias-tunable multiple-transconductance performance has been successfully fabricated by molecular beam epitaxy (MBE). As compared to a conventional HEMT structure with a single undoped spacer layer, the present superlattice spacer, which accommodates the lattice-mismatch-induced strain, provides improvement of 31% and 43% on electron mobility and the two-dimensional electron gas (2DEG) concentration-mobility product, respectively. In addition, the device demonstrates bias-tunable multiple-transconductance plateaus due to modulation of the 2DEG concentration and mobility product by real-space transfer at high channel voltage. The distinguished device characteristics of the present structure are promising for a high-speed analog-to-digital converter (ADC) or multiple-state quantizer applications.
UR - http://www.scopus.com/inward/record.url?scp=0038608214&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038608214&partnerID=8YFLogxK
U2 - 10.1143/jjap.42.1545
DO - 10.1143/jjap.42.1545
M3 - Article
AN - SCOPUS:0038608214
SN - 0021-4922
VL - 42
SP - 1545
EP - 1547
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 A
ER -