Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

K. F. Yarn; Y. H. Wang

doi:10.1016/0040-6090(94)06350-8

Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

Research output: Contribution to journal › Article › peer-review

Abstract

A novel GaAs n⁺-n-δ(p⁺)-n-p⁺-n-δ(p⁺)-n-n⁺ double heterojunction triangular barrier structure with two Al_0.3G_0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

Original language	English
Pages (from-to)	104-109
Number of pages	6
Journal	Thin Solid Films
Volume	257
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(94)06350-8
Publication status	Published - 1995 Feb 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)",

abstract = "A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.",

author = "Yarn, {K. F.} and Wang, {Y. H.}",

note = "Funding Information: This work was supportedi n part by the National ScienceC ouncil of the Republic of China under contract Nos. NSC-82-0404-E006-43a5n d NSC-82-0417-E006-188. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1995",

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doi = "10.1016/0040-6090(94)06350-8",

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T1 - Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

AU - Yarn, K. F.

AU - Wang, Y. H.

N1 - Funding Information: This work was supportedi n part by the National ScienceC ouncil of the Republic of China under contract Nos. NSC-82-0404-E006-43a5n d NSC-82-0417-E006-188. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1995/2/15

Y1 - 1995/2/15

N2 - A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

AB - A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

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