Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

K. F. Yarn, Y. H. Wang

Research output: Contribution to journalArticlepeer-review


A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

Original languageEnglish
Pages (from-to)104-109
Number of pages6
JournalThin Solid Films
Issue number1
Publication statusPublished - 1995 Feb 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)'. Together they form a unique fingerprint.

Cite this