Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

K. F. Yarn, Yeong-Her Wang

Research output: Contribution to journalArticle

Abstract

A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

Original languageEnglish
Pages (from-to)104-109
Number of pages6
JournalThin Solid Films
Volume257
Issue number1
DOIs
Publication statusPublished - 1995 Feb 15

Fingerprint

aluminum gallium arsenides
Heterojunctions
heterojunctions
switches
Switches
Carrier transport
barrier layers
equivalent circuits
multiplication
Molecular beam epitaxy
Equivalent circuits
accumulators
avalanches
ambient temperature
Transistors
Diodes
transistors
molecular beam epitaxy
diodes
occurrences

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{4d3c1da1e956453a8bdba78569a089d6,
title = "Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)",
abstract = "A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.",
author = "Yarn, {K. F.} and Yeong-Her Wang",
year = "1995",
month = "2",
day = "15",
doi = "10.1016/0040-6090(94)06350-8",
language = "English",
volume = "257",
pages = "104--109",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS). / Yarn, K. F.; Wang, Yeong-Her.

In: Thin Solid Films, Vol. 257, No. 1, 15.02.1995, p. 104-109.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

AU - Yarn, K. F.

AU - Wang, Yeong-Her

PY - 1995/2/15

Y1 - 1995/2/15

N2 - A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

AB - A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0029250116&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029250116&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(94)06350-8

DO - 10.1016/0040-6090(94)06350-8

M3 - Article

VL - 257

SP - 104

EP - 109

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -