Abstract
This paper proposes a new hydrogenated amorphous silicon thin-film-transistor-based (a-Si:H TFT-based) gate driver circuit that uses the time-division driving method to ameliorate the display-to-touch crosstalk. The proposed work utilizes a recharging circuit to discharge the voltage on the gate node of the driving TFT when the touch sensing starts with the purpose of suppressing the long-term stress of the driving TFT, and charges the gate node of the driving TFT again before the end of the touch-sensing period to enhance the driving capability of the gate driver circuit. Furthermore, the proposed gate driver circuit achieves bidirectional transmission and an adjustable reporting rate of touch sensing. Measurements verify that the threshold voltage shift of the driving TFT is suppressed from 4.8 to 2.9 V after 120 h of stress at 85 °C and the output waveforms of the proposed gate driver circuits are generated correctly with forward transmission, backward transmission, and pausing in different stages. Moreover, the measured output waveforms are stable without distortion after 360 h reliability test at 85 °C. Consequently, the proposed gate driver circuit is suitable for use in 5.46-in full high-definition panels with in-cell touch technology.
| Original language | English |
|---|---|
| Article number | 8049363 |
| Pages (from-to) | 3585-3591 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Industrial Electronics |
| Volume | 65 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2018 Apr |
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All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Electrical and Electronic Engineering
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Bidirectional Gate Driver Circuit Using Recharging and Time-Division Driving Scheme for In-Cell Touch LCDs. / Lin, Chih Lung; Lai, Po Chun; Lai, Po Cheng; Chu, Ting Ching; Lee, Chia Lun.
In: IEEE Transactions on Industrial Electronics, Vol. 65, No. 4, 8049363, 04.2018, p. 3585-3591.Research output: Contribution to journal › Article
TY - JOUR
T1 - Bidirectional Gate Driver Circuit Using Recharging and Time-Division Driving Scheme for In-Cell Touch LCDs
AU - Lin, Chih Lung
AU - Lai, Po Chun
AU - Lai, Po Cheng
AU - Chu, Ting Ching
AU - Lee, Chia Lun
PY - 2018/4
Y1 - 2018/4
N2 - This paper proposes a new hydrogenated amorphous silicon thin-film-transistor-based (a-Si:H TFT-based) gate driver circuit that uses the time-division driving method to ameliorate the display-to-touch crosstalk. The proposed work utilizes a recharging circuit to discharge the voltage on the gate node of the driving TFT when the touch sensing starts with the purpose of suppressing the long-term stress of the driving TFT, and charges the gate node of the driving TFT again before the end of the touch-sensing period to enhance the driving capability of the gate driver circuit. Furthermore, the proposed gate driver circuit achieves bidirectional transmission and an adjustable reporting rate of touch sensing. Measurements verify that the threshold voltage shift of the driving TFT is suppressed from 4.8 to 2.9 V after 120 h of stress at 85 °C and the output waveforms of the proposed gate driver circuits are generated correctly with forward transmission, backward transmission, and pausing in different stages. Moreover, the measured output waveforms are stable without distortion after 360 h reliability test at 85 °C. Consequently, the proposed gate driver circuit is suitable for use in 5.46-in full high-definition panels with in-cell touch technology.
AB - This paper proposes a new hydrogenated amorphous silicon thin-film-transistor-based (a-Si:H TFT-based) gate driver circuit that uses the time-division driving method to ameliorate the display-to-touch crosstalk. The proposed work utilizes a recharging circuit to discharge the voltage on the gate node of the driving TFT when the touch sensing starts with the purpose of suppressing the long-term stress of the driving TFT, and charges the gate node of the driving TFT again before the end of the touch-sensing period to enhance the driving capability of the gate driver circuit. Furthermore, the proposed gate driver circuit achieves bidirectional transmission and an adjustable reporting rate of touch sensing. Measurements verify that the threshold voltage shift of the driving TFT is suppressed from 4.8 to 2.9 V after 120 h of stress at 85 °C and the output waveforms of the proposed gate driver circuits are generated correctly with forward transmission, backward transmission, and pausing in different stages. Moreover, the measured output waveforms are stable without distortion after 360 h reliability test at 85 °C. Consequently, the proposed gate driver circuit is suitable for use in 5.46-in full high-definition panels with in-cell touch technology.
UR - http://www.scopus.com/inward/record.url?scp=85030675199&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85030675199&partnerID=8YFLogxK
U2 - 10.1109/TIE.2017.2756583
DO - 10.1109/TIE.2017.2756583
M3 - Article
AN - SCOPUS:85030675199
VL - 65
SP - 3585
EP - 3591
JO - IEEE Transactions on Industrial Electronics
JF - IEEE Transactions on Industrial Electronics
SN - 0278-0046
IS - 4
M1 - 8049363
ER -