TY - JOUR
T1 - Bilayer modulation with dual vacancy filaments by intentionally oxidized titanium oxide for multilayer-hBN RRAM
AU - Chen, Po An
AU - Hsu, Wei Chou
AU - Chiang, Meng Hsueh
N1 - Funding Information:
Manuscript received April 18, 2021; accepted August 31, 2021. Date of publication September 8, 2021; date of current version September 24, 2021. This work was supported in part by the Ministry of Science and Technology of Taiwan. The review of this article was arranged by the guest editors of the Special Issue for NMDC2019. (Corresponding author: Meng-Hsueh Chiang.) The authors are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (e-mail: [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 2002-2012 IEEE.
PY - 2021
Y1 - 2021
N2 - In this work, an effective bilayer modulation is achieved for the multilayer hexagonal boron nitride (hBN) resistive random-access memory (RRAM) by an insertion of intentionally oxidized titanium oxide layer. The controllable multiple resistance states can be achieved by setting stop voltage of gradual RESET and compliance current during SET, which is beneficial for multilevel storage and neuromorphic application. The switching uniformity and the endurance of memory window are both improved by the effective bilayer modulation. Through experimental data and ab-initio calculation, both the switching and modulation mechanisms are clarified. The effective modulation can be attributed to the multiple thin conductive filaments with dual vacancies within the bilayer stacks of the multilayer hBN and titanium oxide. A significant formation energy difference between the two kinds of vacancy defects existing in bilayer stacks plays the key role for the filament formation through the fixed paths which benefits the switching uniformity. The findings gained from this work can help promote hBN in RRAM application.
AB - In this work, an effective bilayer modulation is achieved for the multilayer hexagonal boron nitride (hBN) resistive random-access memory (RRAM) by an insertion of intentionally oxidized titanium oxide layer. The controllable multiple resistance states can be achieved by setting stop voltage of gradual RESET and compliance current during SET, which is beneficial for multilevel storage and neuromorphic application. The switching uniformity and the endurance of memory window are both improved by the effective bilayer modulation. Through experimental data and ab-initio calculation, both the switching and modulation mechanisms are clarified. The effective modulation can be attributed to the multiple thin conductive filaments with dual vacancies within the bilayer stacks of the multilayer hBN and titanium oxide. A significant formation energy difference between the two kinds of vacancy defects existing in bilayer stacks plays the key role for the filament formation through the fixed paths which benefits the switching uniformity. The findings gained from this work can help promote hBN in RRAM application.
UR - http://www.scopus.com/inward/record.url?scp=85114746131&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85114746131&partnerID=8YFLogxK
U2 - 10.1109/TNANO.2021.3110899
DO - 10.1109/TNANO.2021.3110899
M3 - Article
AN - SCOPUS:85114746131
SN - 1536-125X
VL - 20
SP - 687
EP - 694
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
ER -