Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

Ke Jing Lee; Yu Chi Chang; Cheng Jung Lee; Yeong Her Wang

doi:10.1016/j.vacuum.2016.12.004

Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO₂/Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO₂/Ti diode. Experimental results show that the bipolar 1D1R memory device has reproducible, uniform, and self-rectifying resistive-switching behavior in low-resistance state. High current ON/OFF ratio (>10⁵) and satisfactory retention (>>10⁵ s) are achieved. Therefore, the proposed device exhibits high potential for high-density integrated nonvolatile memory applications.

Original language	English
Pages (from-to)	35-41
Number of pages	7
Journal	Vacuum
Volume	140
DOIs	https://doi.org/10.1016/j.vacuum.2016.12.004
Publication status	Published - 2017 Jun 1

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2016.12.004

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title = "Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices",

abstract = "A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO2/Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO2/Ti diode. Experimental results show that the bipolar 1D1R memory device has reproducible, uniform, and self-rectifying resistive-switching behavior in low-resistance state. High current ON/OFF ratio (>105) and satisfactory retention (>>105 s) are achieved. Therefore, the proposed device exhibits high potential for high-density integrated nonvolatile memory applications.",

author = "Lee, {Ke Jing} and Chang, {Yu Chi} and Lee, {Cheng Jung} and Wang, {Yeong Her}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology of Taiwan under contracts NSC100-2627-E-006-001, NSC98-2221-E-006-213-MY3, NSC101-2221-E- 006-141- MY3. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2017",

month = jun,

day = "1",

doi = "10.1016/j.vacuum.2016.12.004",

language = "English",

volume = "140",

pages = "35--41",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

AU - Lee, Ke Jing

AU - Chang, Yu Chi

AU - Lee, Cheng Jung

AU - Wang, Yeong Her

N1 - Funding Information: This work was supported in part by the Ministry of Science and Technology of Taiwan under contracts NSC100-2627-E-006-001, NSC98-2221-E-006-213-MY3, NSC101-2221-E- 006-141- MY3. Publisher Copyright: © 2016 Elsevier Ltd

PY - 2017/6/1

Y1 - 2017/6/1

N2 - A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO2/Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO2/Ti diode. Experimental results show that the bipolar 1D1R memory device has reproducible, uniform, and self-rectifying resistive-switching behavior in low-resistance state. High current ON/OFF ratio (>105) and satisfactory retention (>>105 s) are achieved. Therefore, the proposed device exhibits high potential for high-density integrated nonvolatile memory applications.

AB - A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO2/Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO2/Ti diode. Experimental results show that the bipolar 1D1R memory device has reproducible, uniform, and self-rectifying resistive-switching behavior in low-resistance state. High current ON/OFF ratio (>105) and satisfactory retention (>>105 s) are achieved. Therefore, the proposed device exhibits high potential for high-density integrated nonvolatile memory applications.

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DO - 10.1016/j.vacuum.2016.12.004

M3 - Article

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SN - 0042-207X

VL - 140

SP - 35

EP - 41

JO - Vacuum

JF - Vacuum

ER -

Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

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