Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Yeong Her Wang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO2/Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO2/Ti diode. Experimental results show that the bipolar 1D1R memory device has reproducible, uniform, and self-rectifying resistive-switching behavior in low-resistance state. High current ON/OFF ratio (>105) and satisfactory retention (>>105 s) are achieved. Therefore, the proposed device exhibits high potential for high-density integrated nonvolatile memory applications.

Original languageEnglish
Pages (from-to)35-41
Number of pages7
JournalVacuum
Volume140
DOIs
Publication statusPublished - 2017 Jun 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this