Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias

Wei Kang Hsieh, Kin Tak Lam, Shoou-Jinn Chang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).

Original languageEnglish
Pages (from-to)30-33
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume35
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

random access memory
oxygen recombination
Data storage equipment
conduction
Carrier transport
low resistance
high resistance
Oxygen vacancies
oxygen ions
filaments
Ions
Oxygen
Fabrication
fabrication
room temperature
oxygen
curves
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).",
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Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias. / Hsieh, Wei Kang; Lam, Kin Tak; Chang, Shoou-Jinn.

In: Materials Science in Semiconductor Processing, Vol. 35, 01.01.2015, p. 30-33.

Research output: Contribution to journalArticle

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