Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias

Wei Kang Hsieh; Kin Tak Lam; Shoou Jinn Chang

doi:10.1016/j.mssp.2015.02.073

Bipolar Ni/ZnO/HfO₂/Ni RRAM with multilevel characteristic by different reset bias

Wei Kang Hsieh, Kin Tak Lam, Shoou Jinn Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO₂/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).

Original language	English
Pages (from-to)	30-33
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	35
DOIs	https://doi.org/10.1016/j.mssp.2015.02.073
Publication status	Published - 2015 Jul

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2015.02.073

Cite this

@article{5a0980cff74d4af9945a7545fbaf8bc9,

title = "Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias",

abstract = "The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).",

author = "Hsieh, {Wei Kang} and Lam, {Kin Tak} and Chang, {Shoou Jinn}",

year = "2015",

month = jul,

doi = "10.1016/j.mssp.2015.02.073",

language = "English",

volume = "35",

pages = "30--33",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias

AU - Hsieh, Wei Kang

AU - Lam, Kin Tak

AU - Chang, Shoou Jinn

PY - 2015/7

Y1 - 2015/7

N2 - The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).

AB - The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).

UR - http://www.scopus.com/inward/record.url?scp=84925061495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925061495&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2015.02.073

DO - 10.1016/j.mssp.2015.02.073

M3 - Article

AN - SCOPUS:84925061495

SN - 1369-8001

VL - 35

SP - 30

EP - 33

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Bipolar Ni/ZnO/HfO₂/Ni RRAM with multilevel characteristic by different reset bias

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this