Abstract
The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).
| Original language | English |
|---|---|
| Pages (from-to) | 30-33 |
| Number of pages | 4 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 35 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias. / Hsieh, Wei Kang; Lam, Kin Tak; Chang, Shoou-Jinn.
In: Materials Science in Semiconductor Processing, Vol. 35, 01.01.2015, p. 30-33.Research output: Contribution to journal › Article
TY - JOUR
T1 - Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias
AU - Hsieh, Wei Kang
AU - Lam, Kin Tak
AU - Chang, Shoou-Jinn
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).
AB - The authors report the fabrication and characterization of resistive random access memory (RRAM) with Ni/ZnO/HfO2/Ni structure at room temperature. It was found that the proposed device exhibited bipolar switching behavior with multilevel characteristics in a reset process. It was found that the device exhibited two-step reset stage under high reset bias. By applying a 2nd reset stage after the transformation of the 1st reset stage, it was found that the RRAM could return to the initial state. From I-V curves measured in these two reset stages, it was found that the current conduction was dominated by Schottky emission due to the migration of oxygen ions and recombination with oxygen vacancies. This reaction could break the conducting filament so as to transform carrier transport mechanism to Schottky emission. This also results in the simultaneous transformation from low resistance state (LRS) to high resistance state (HRS).
UR - http://www.scopus.com/inward/record.url?scp=84925061495&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925061495&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2015.02.073
DO - 10.1016/j.mssp.2015.02.073
M3 - Article
AN - SCOPUS:84925061495
VL - 35
SP - 30
EP - 33
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -