Abstract
High-resistance state (HRS) current has significant effect on the reliability and power consumption of resistive switching memories. Low HRS current is helpful for obtaining ultra-low power and for high ON/OFF ratio nonvolatile memory application. The reduced HRS current of a sol-gel magnesium titanate nickelate-based resistive random access memory by using nickel (II) acetylacetone as substitute for acetylacetone in magnesium titanate (MTO) was presented. Forming-free, high ON/OFF ratio of over 106, excellent current distribution and good retention at 85 °C were achieved. Moreover, the effect of nickel (Ni) on the surface roughness, operation voltage, switching cycles, HRS current, ON/OFF ratio, current distribution, and switching behavior was explored. These results indicate that the incorporation of Ni in sol-gel MTO is an effective way to achieve high-performance memory devices.
Original language | English |
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Article number | 7463006 |
Pages (from-to) | 321-327 |
Number of pages | 7 |
Journal | IEEE Journal of the Electron Devices Society |
Volume | 4 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2016 Sep |
All Science Journal Classification (ASJC) codes
- Biotechnology
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering