Bipolar resistive switching behavior in Sol-Gel MgTiNiOx memory device

Yu Chi Chang, Ke Jing Lee, Cheng Jung Lee, Li Wen Wang, Yeong Her Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

High-resistance state (HRS) current has significant effect on the reliability and power consumption of resistive switching memories. Low HRS current is helpful for obtaining ultra-low power and for high ON/OFF ratio nonvolatile memory application. The reduced HRS current of a sol-gel magnesium titanate nickelate-based resistive random access memory by using nickel (II) acetylacetone as substitute for acetylacetone in magnesium titanate (MTO) was presented. Forming-free, high ON/OFF ratio of over 106, excellent current distribution and good retention at 85 °C were achieved. Moreover, the effect of nickel (Ni) on the surface roughness, operation voltage, switching cycles, HRS current, ON/OFF ratio, current distribution, and switching behavior was explored. These results indicate that the incorporation of Ni in sol-gel MTO is an effective way to achieve high-performance memory devices.

Original languageEnglish
Article number7463006
Pages (from-to)321-327
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume4
Issue number5
DOIs
Publication statusPublished - 2016 Sep

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All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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