Bipolar resistive switching characteristics in flexible Pt/MZT/Al Memory and Ni/NbO2/Ni selector structure

Ke Jing Lee; Yu Chi Chang; Cheng Jung Lee; Li Wen Wang; Yeong Her Wang

doi:10.1109/JEDS.2018.2801278

Bipolar resistive switching characteristics in flexible Pt/MZT/Al Memory and Ni/NbO₂/Ni selector structure

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Li Wen Wang, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The use of a threshold-switching Ni/NbO₂/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 10⁵, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.

Original language	English
Pages (from-to)	518-524
Number of pages	7
Journal	IEEE Journal of the Electron Devices Society
Volume	6
DOIs	https://doi.org/10.1109/JEDS.2018.2801278
Publication status	Published - 2018 Feb 5

All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/JEDS.2018.2801278

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title = "Bipolar resistive switching characteristics in flexible Pt/MZT/Al Memory and Ni/NbO2/Ni selector structure",

abstract = "The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 105, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.",

author = "Lee, {Ke Jing} and Chang, {Yu Chi} and Lee, {Cheng Jung} and Wang, {Li Wen} and Wang, {Yeong Her}",

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AU - Lee, Ke Jing

AU - Chang, Yu Chi

AU - Lee, Cheng Jung

AU - Wang, Li Wen

AU - Wang, Yeong Her

PY - 2018/2/5

Y1 - 2018/2/5

N2 - The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 105, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.

AB - The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 105, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.

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JO - IEEE Journal of the Electron Devices Society

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Bipolar resistive switching characteristics in flexible Pt/MZT/Al Memory and Ni/NbO₂/Ni selector structure

Abstract

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