Bipolar resistive switching characteristics in flexible Pt/MZT/Al Memory and Ni/NbO2/Ni selector structure

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Li Wen Wang, Yeong-Her Wang

Research output: Contribution to journalArticle

Abstract

The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 105, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.

Original languageEnglish
Pages (from-to)518-524
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
Publication statusPublished - 2018 Feb 5

Fingerprint

Data storage equipment
Equipment and Supplies
Flexible electronics
Resistors
Magnesium
Electric potential
Substrates
magnesium titanate

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 105, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.",
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Bipolar resistive switching characteristics in flexible Pt/MZT/Al Memory and Ni/NbO2/Ni selector structure. / Lee, Ke Jing; Chang, Yu Chi; Lee, Cheng Jung; Wang, Li Wen; Wang, Yeong-Her.

In: IEEE Journal of the Electron Devices Society, Vol. 6, 05.02.2018, p. 518-524.

Research output: Contribution to journalArticle

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AB - The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 105, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.

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