Bistable diodes grown by silicon molecular beam epitaxy

Xuegen Zhu; Xinyu Zheng; Mike Pak; Martin O. Tanner; Kang L. Wang

doi:10.1016/S0040-6090(98)00473-8

Bistable diodes grown by silicon molecular beam epitaxy

Xuegen Zhu, Xinyu Zheng, Mike Pak, Martin O. Tanner, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.

Original language	English
Pages (from-to)	201-205
Number of pages	5
Journal	Thin Solid Films
Volume	321
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)00473-8
Publication status	Published - 1998 May 26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Bistable diodes grown by silicon molecular beam epitaxy",

abstract = "Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.",

author = "Xuegen Zhu and Xinyu Zheng and Mike Pak and Tanner, {Martin O.} and Wang, {Kang L.}",

note = "Funding Information: This work is supported in part by SRC and NSF. ",

year = "1998",

month = may,

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doi = "10.1016/S0040-6090(98)00473-8",

language = "English",

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T1 - Bistable diodes grown by silicon molecular beam epitaxy

AU - Zhu, Xuegen

AU - Zheng, Xinyu

AU - Pak, Mike

AU - Tanner, Martin O.

AU - Wang, Kang L.

N1 - Funding Information: This work is supported in part by SRC and NSF.

PY - 1998/5/26

Y1 - 1998/5/26

N2 - Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.

AB - Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.

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