Abstract
Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.
Original language | English |
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Pages (from-to) | 201-205 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 321 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1998 May 26 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry