Bistable diodes grown by silicon molecular beam epitaxy

Xuegen Zhu, Xinyu Zheng, Mike Pak, Martin O. Tanner, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.

Original languageEnglish
Pages (from-to)201-205
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1998 May 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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