Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications

Yi Sheng Lai, Chia Hsun Tu, Dim Lee Kwong, J. S. Chen

Research output: Contribution to journalArticlepeer-review

186 Citations (Scopus)

Abstract

Poly(N-vinylcarbazole) (PVK) has been fabricated by spin-coating to show the bistable resistance switching characteristics. Various resistance states can be made by controlling the on-state current through the PVK films. The resistance of the on-state PVK films also affects the turn-off current, which needs to erase the on state. The filament theory is used to elucidate the observed phenomenon. We demonstrate that the PVK films exhibit good retention and stable "read-write-read-erase" cyclic switching characteristics. The PVK films also show a good switching behavior with on-off ratio of 104, which will be a potential material for nonvolatile memory application.

Original languageEnglish
Article number122101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number12
DOIs
Publication statusPublished - 2005 Sep 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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