Block reinforcement to optimize lifetime of flash storage devices

Chien Chung Ho, Yuan Hao Chang, Che Wei Tsao, Pei Lun Suei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

With the advances of manufacturing technology and aggressive use of multi-level-cell (MLC) for flash memory, flash memory has faced a serious challenge on its device lifetime due to the fast-decreasing capacity caused by worn-out blocks. In contrast to existing works, we propose a block reinforcement scheme to optimize the guaranteed lifetime of flash storage devices by extending the useable period of flash blocks with limited performance degradation and space overhead. A serious of experiments was conducted to evaluate the efficacy of the proposed scheme and the results are very encouraging.

Original languageEnglish
Title of host publication2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages717-718
Number of pages2
ISBN (Electronic)9781479951451
DOIs
Publication statusPublished - 2014 Feb 3
Event2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan
Duration: 2014 Oct 72014 Oct 10

Publication series

Name2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014

Other

Other2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
Country/TerritoryJapan
CityTokyo
Period14-10-0714-10-10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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