Blue, green and white InGaN light-emitting diodes grown on Si

Chaun Feng Shih; Nie Chuan Chen; Chin An Chang; Kuo Shung Liu

doi:10.1143/JJAP.44.L140

Blue, green and white InGaN light-emitting diodes grown on Si

Chaun Feng Shih, Nie Chuan Chen, Chin An Chang, Kuo Shung Liu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

High-brightness InGaN light-emitting diodes (LEDs) have been grown on Si substrates by metal-organic vapor phase epitaxy. Both blue and green LEDs with an output power exceeding 0.7 mW and a lifetime exceeding 500 h were achieved. Two factors were analyzed: the difference between identical LED structures grown on Si and sapphire substrates, and the effect of cracking on the performance of LEDs grown on Si. Using a Si substrate, the LED emission showed a shift toward longer wavelength compared with that from a LED grown on sapphire. The presence of cracking, unless serious, showed little effect on the brightness and performance of the LEDs grown on Si. The mechanisms involved are discussed.

Original language	English
Pages (from-to)	L140-L143
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	1-7
DOIs	https://doi.org/10.1143/JJAP.44.L140
Publication status	Published - 2005 May 2

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/JJAP.44.L140

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abstract = "High-brightness InGaN light-emitting diodes (LEDs) have been grown on Si substrates by metal-organic vapor phase epitaxy. Both blue and green LEDs with an output power exceeding 0.7 mW and a lifetime exceeding 500 h were achieved. Two factors were analyzed: the difference between identical LED structures grown on Si and sapphire substrates, and the effect of cracking on the performance of LEDs grown on Si. Using a Si substrate, the LED emission showed a shift toward longer wavelength compared with that from a LED grown on sapphire. The presence of cracking, unless serious, showed little effect on the brightness and performance of the LEDs grown on Si. The mechanisms involved are discussed.",

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T1 - Blue, green and white InGaN light-emitting diodes grown on Si

AU - Shih, Chaun Feng

AU - Chen, Nie Chuan

AU - Chang, Chin An

AU - Liu, Kuo Shung

PY - 2005/5/2

Y1 - 2005/5/2

N2 - High-brightness InGaN light-emitting diodes (LEDs) have been grown on Si substrates by metal-organic vapor phase epitaxy. Both blue and green LEDs with an output power exceeding 0.7 mW and a lifetime exceeding 500 h were achieved. Two factors were analyzed: the difference between identical LED structures grown on Si and sapphire substrates, and the effect of cracking on the performance of LEDs grown on Si. Using a Si substrate, the LED emission showed a shift toward longer wavelength compared with that from a LED grown on sapphire. The presence of cracking, unless serious, showed little effect on the brightness and performance of the LEDs grown on Si. The mechanisms involved are discussed.

AB - High-brightness InGaN light-emitting diodes (LEDs) have been grown on Si substrates by metal-organic vapor phase epitaxy. Both blue and green LEDs with an output power exceeding 0.7 mW and a lifetime exceeding 500 h were achieved. Two factors were analyzed: the difference between identical LED structures grown on Si and sapphire substrates, and the effect of cracking on the performance of LEDs grown on Si. Using a Si substrate, the LED emission showed a shift toward longer wavelength compared with that from a LED grown on sapphire. The presence of cracking, unless serious, showed little effect on the brightness and performance of the LEDs grown on Si. The mechanisms involved are discussed.

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Blue, green and white InGaN light-emitting diodes grown on Si

Abstract

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