Blue, green and white InGaN light-emitting diodes grown on Si

Chaun Feng Shih, Nie Chuan Chen, Chin An Chang, Kuo Shung Liu

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


High-brightness InGaN light-emitting diodes (LEDs) have been grown on Si substrates by metal-organic vapor phase epitaxy. Both blue and green LEDs with an output power exceeding 0.7 mW and a lifetime exceeding 500 h were achieved. Two factors were analyzed: the difference between identical LED structures grown on Si and sapphire substrates, and the effect of cracking on the performance of LEDs grown on Si. Using a Si substrate, the LED emission showed a shift toward longer wavelength compared with that from a LED grown on sapphire. The presence of cracking, unless serious, showed little effect on the brightness and performance of the LEDs grown on Si. The mechanisms involved are discussed.

Original languageEnglish
Pages (from-to)L140-L143
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number1-7
Publication statusPublished - 2005 May 2

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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