Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation

Chun Hsien Huang; Hui Ling Huang; Chen I. Hung; Na Fu Wang; Yeong Her Wang; Mau Phon Houng

doi:10.1143/JJAP.47.1532

Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation

Chun Hsien Huang, Hui Ling Huang, Chen I. Hung, Na Fu Wang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Using an advanced ultraviolet irradiation (UV curing) process, a high performance porous low-kfilm of k = 2.57, whose Young's modulus is larger than 8 GPa, now is developed to improve the mechanical properties of a film by the reconstruction of Si-Onetwork structure from cage-like Si-Obonds, suboxide structures and Si-CH₃ bonds. It was found that the UV curing process can efficiently strengthen the mechanical properties of porous low-k film, and reduce its dielectric constant value by removing hydrocarbon bonds to form porosities. As a result, the key features of this optimal SiOCH material, high elastic modulus and a low dielectric constant, provide promising properties for future integrated schemes.

Original language	English
Pages (from-to)	1532-1535
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	3 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.1532
Publication status	Published - 2008 Mar 14

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.47.1532

Cite this

@article{ef2d209907fc4434aab50613c3755551,

title = "Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation",

abstract = "Using an advanced ultraviolet irradiation (UV curing) process, a high performance porous low-kfilm of k = 2.57, whose Young's modulus is larger than 8 GPa, now is developed to improve the mechanical properties of a film by the reconstruction of Si-Onetwork structure from cage-like Si-Obonds, suboxide structures and Si-CH3 bonds. It was found that the UV curing process can efficiently strengthen the mechanical properties of porous low-k film, and reduce its dielectric constant value by removing hydrocarbon bonds to form porosities. As a result, the key features of this optimal SiOCH material, high elastic modulus and a low dielectric constant, provide promising properties for future integrated schemes.",

author = "Huang, {Chun Hsien} and Huang, {Hui Ling} and Hung, {Chen I.} and Wang, {Na Fu} and Wang, {Yeong Her} and Houng, {Mau Phon}",

year = "2008",

month = mar,

day = "14",

doi = "10.1143/JJAP.47.1532",

language = "English",

volume = "47",

pages = "1532--1535",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

number = "3 PART 1",

}

TY - JOUR

T1 - Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation

AU - Huang, Chun Hsien

AU - Huang, Hui Ling

AU - Hung, Chen I.

AU - Wang, Na Fu

AU - Wang, Yeong Her

AU - Houng, Mau Phon

PY - 2008/3/14

Y1 - 2008/3/14

N2 - Using an advanced ultraviolet irradiation (UV curing) process, a high performance porous low-kfilm of k = 2.57, whose Young's modulus is larger than 8 GPa, now is developed to improve the mechanical properties of a film by the reconstruction of Si-Onetwork structure from cage-like Si-Obonds, suboxide structures and Si-CH3 bonds. It was found that the UV curing process can efficiently strengthen the mechanical properties of porous low-k film, and reduce its dielectric constant value by removing hydrocarbon bonds to form porosities. As a result, the key features of this optimal SiOCH material, high elastic modulus and a low dielectric constant, provide promising properties for future integrated schemes.

AB - Using an advanced ultraviolet irradiation (UV curing) process, a high performance porous low-kfilm of k = 2.57, whose Young's modulus is larger than 8 GPa, now is developed to improve the mechanical properties of a film by the reconstruction of Si-Onetwork structure from cage-like Si-Obonds, suboxide structures and Si-CH3 bonds. It was found that the UV curing process can efficiently strengthen the mechanical properties of porous low-k film, and reduce its dielectric constant value by removing hydrocarbon bonds to form porosities. As a result, the key features of this optimal SiOCH material, high elastic modulus and a low dielectric constant, provide promising properties for future integrated schemes.

UR - http://www.scopus.com/inward/record.url?scp=52649178406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52649178406&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.1532

DO - 10.1143/JJAP.47.1532

M3 - Article

AN - SCOPUS:52649178406

SN - 0021-4922

VL - 47

SP - 1532

EP - 1535

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 3 PART 1

ER -

Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this