The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiCxNy films were studied by nano-indentation. Amorphous SiCxNy films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH4-CH3NH2-N2-H2 gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiCxNy materials. Si-H, C-H and N-H bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiCxNy films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiCxNy films were 27-30 and 211-258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiCxNy were 22-26 and 115-144 GPa, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering