Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation

H. C. Lo; J. J. Wu; C. Y. Wen; T. S. Wong; S. T. Lin; K. H. Chen; L. C. Chen

doi:10.1016/S0925-9635(01)00421-6

Bonding characterization and nano-indentation study of the amorphous SiC_xN_y films with and without hydrogen incorporation

H. C. Lo, J. J. Wu, C. Y. Wen, T. S. Wong, S. T. Lin, K. H. Chen, L. C. Chen

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiC_xN_y films were studied by nano-indentation. Amorphous SiC_xN_y films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH₄-CH₃NH₂-N₂-H₂ gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiC_xN_y materials. Si-H, C-H and N-H bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiC_xN_y films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiC_xN_y films were 27-30 and 211-258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiC_xN_y were 22-26 and 115-144 GPa, respectively.

Original language	English
Pages (from-to)	1916-1920
Number of pages	5
Journal	Diamond and Related Materials
Volume	10
Issue number	9-10
DOIs	https://doi.org/10.1016/S0925-9635(01)00421-6
Publication status	Published - 2001 Sep

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(01)00421-6

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@article{54771d8b2b604207b0133e20fd7236b4,

title = "Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation",

abstract = "The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiCxNy films were studied by nano-indentation. Amorphous SiCxNy films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH4-CH3NH2-N2-H2 gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiCxNy materials. Si-H, C-H and N-H bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiCxNy films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiCxNy films were 27-30 and 211-258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiCxNy were 22-26 and 115-144 GPa, respectively.",

author = "Lo, {H. C.} and Wu, {J. J.} and Wen, {C. Y.} and Wong, {T. S.} and Lin, {S. T.} and Chen, {K. H.} and Chen, {L. C.}",

year = "2001",

month = sep,

doi = "10.1016/S0925-9635(01)00421-6",

language = "English",

volume = "10",

pages = "1916--1920",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "9-10",

}

TY - JOUR

T1 - Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation

AU - Lo, H. C.

AU - Wu, J. J.

AU - Wen, C. Y.

AU - Wong, T. S.

AU - Lin, S. T.

AU - Chen, K. H.

AU - Chen, L. C.

PY - 2001/9

Y1 - 2001/9

N2 - The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiCxNy films were studied by nano-indentation. Amorphous SiCxNy films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH4-CH3NH2-N2-H2 gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiCxNy materials. Si-H, C-H and N-H bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiCxNy films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiCxNy films were 27-30 and 211-258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiCxNy were 22-26 and 115-144 GPa, respectively.

AB - The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiCxNy films were studied by nano-indentation. Amorphous SiCxNy films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH4-CH3NH2-N2-H2 gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiCxNy materials. Si-H, C-H and N-H bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiCxNy films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiCxNy films were 27-30 and 211-258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiCxNy were 22-26 and 115-144 GPa, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0035448844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035448844&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00421-6

DO - 10.1016/S0925-9635(01)00421-6

M3 - Article

AN - SCOPUS:0035448844

VL - 10

SP - 1916

EP - 1920

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 9-10

ER -