Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation

H. C. Lo, J. J. Wu, C. Y. Wen, T. S. Wong, S. T. Lin, K. H. Chen, L. C. Chen

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Abstract

The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiCxNy films were studied by nano-indentation. Amorphous SiCxNy films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH4-CH3NH2-N2-H2 gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiCxNy materials. Si-H, C-H and N-H bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiCxNy films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiCxNy films were 27-30 and 211-258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiCxNy were 22-26 and 115-144 GPa, respectively.

Original languageEnglish
Pages (from-to)1916-1920
Number of pages5
JournalDiamond and Related Materials
Volume10
Issue number9-10
DOIs
Publication statusPublished - 2001 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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