Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy

S. L. Wu, T. K. Carns, Shui-Jinn Wang, K. L. Wang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A working p-type Si metal semiconductor field-effect transistor structure, utilizing a boron delta-doped layer as the conducting channel, has been successfully fabricated. Based on Hall measurements, a hole mobility of 120 (180) cm 2 V -1 s -1 at 300 (77) K has been obtained. The sheet carrier density of the delta layer was estimated to be about 1.8×10 12 cm -2. It is shown that the delta field-effect transistor exhibits an extrinsic transconductance of 640 μS/mm for a gate length of 5 μm, and a high gate to drain breakdown voltage (≳18 V). By reducing the gate length to 1 μm, a transconductance of up to 3.2 mS/mm is expected.

Original languageEnglish
Pages (from-to)1363-1365
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number10
DOIs
Publication statusPublished - 1993 Dec 1

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boron
molecular beam epitaxy
field effect transistors
transconductance
metals
hole mobility
electrical faults
conduction

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "A working p-type Si metal semiconductor field-effect transistor structure, utilizing a boron delta-doped layer as the conducting channel, has been successfully fabricated. Based on Hall measurements, a hole mobility of 120 (180) cm 2 V -1 s -1 at 300 (77) K has been obtained. The sheet carrier density of the delta layer was estimated to be about 1.8×10 12 cm -2. It is shown that the delta field-effect transistor exhibits an extrinsic transconductance of 640 μS/mm for a gate length of 5 μm, and a high gate to drain breakdown voltage (≳18 V). By reducing the gate length to 1 μm, a transconductance of up to 3.2 mS/mm is expected.",
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Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy. / Wu, S. L.; Carns, T. K.; Wang, Shui-Jinn; Wang, K. L.

In: Applied Physics Letters, Vol. 63, No. 10, 01.12.1993, p. 1363-1365.

Research output: Contribution to journalArticle

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AU - Carns, T. K.

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