Boron induced recrystallization of amorphous silicon film by a rapid thermal process

Ching Hsun Chao, Ko Wei Weng, Horng-Long Cheng, Chien Hung Chan, Shui Yang Lien

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Rapid thermal process (RTP) is to induce boron-doped amorphous silicon into a high degree of crystallization of polycrystalline silicon in 5 min. In addition to the short time characteristic, it also provides a relatively lower temperature route to prepare high percentage of polycrystalline silicon in comparison with solid phase crystallization method. Before RTP, boron is homogeneously doped into the amorphous silicon film by ion implantation technology. After rapid thermal processing, the grain size of the polycrystalline silicon was found about at 0.1-0.5 μm. The degree crystallization of silicon is reached up to 99.1% with a good hole mobility of 138.6 cm 2/V s.

Original languageEnglish
Pages (from-to)7480-7482
Number of pages3
JournalThin Solid Films
Volume518
Issue number24
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Boron
Crystallization
silicon films
Amorphous silicon
Polysilicon
amorphous silicon
boron
silicon
crystallization
Rapid thermal processing
Hole mobility
Silicon
Ion implantation
hole mobility
ion implantation
solid phases
grain size
routes
Hot Temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Chao, Ching Hsun ; Weng, Ko Wei ; Cheng, Horng-Long ; Chan, Chien Hung ; Lien, Shui Yang. / Boron induced recrystallization of amorphous silicon film by a rapid thermal process. In: Thin Solid Films. 2010 ; Vol. 518, No. 24. pp. 7480-7482.
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Boron induced recrystallization of amorphous silicon film by a rapid thermal process. / Chao, Ching Hsun; Weng, Ko Wei; Cheng, Horng-Long; Chan, Chien Hung; Lien, Shui Yang.

In: Thin Solid Films, Vol. 518, No. 24, 01.10.2010, p. 7480-7482.

Research output: Contribution to journalArticle

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