Boron induced recrystallization of amorphous silicon film by a rapid thermal process

Ching Hsun Chao, Ko Wei Weng, Horng Long Cheng, Chien Hung Chan, Shui Yang Lien

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3 Citations (Scopus)

Abstract

Rapid thermal process (RTP) is to induce boron-doped amorphous silicon into a high degree of crystallization of polycrystalline silicon in 5 min. In addition to the short time characteristic, it also provides a relatively lower temperature route to prepare high percentage of polycrystalline silicon in comparison with solid phase crystallization method. Before RTP, boron is homogeneously doped into the amorphous silicon film by ion implantation technology. After rapid thermal processing, the grain size of the polycrystalline silicon was found about at 0.1-0.5 μm. The degree crystallization of silicon is reached up to 99.1% with a good hole mobility of 138.6 cm2/V s.

Original languageEnglish
Pages (from-to)7480-7482
Number of pages3
JournalThin Solid Films
Volume518
Issue number24
DOIs
Publication statusPublished - 2010 Oct 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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