The 200-nm-thick aluminum zinc oxide (AZO) seed sidewall and the 1-μm-wide strips sandwiched by 3-μm-wide SiO2 barriers were utilized to grow parallelly lateral ZnO nanorods using hydrothermal method. The resulting ZnO nanorods were used for fabricating thin-film transistors. To dodge the problem of oxygen vacancies and defects resided in the ZnO nanorods, the annealing process at various temperatures was carried out. Using the measurement of photoluminescence spectra, it was estimated that the ZnO nanorods annealed in an oxygen ambience at 300 °C for 10 min had the lowest density of oxygen vacancies and defects. Consequently, its resulting thin-film transistors revealed the best performances of threshold voltage of 0.07 V, effective field-effect mobility of 63.26 cm2/V-s, transconductance of 20.1 μS and subthreshold swing of 0.44 V/dec.
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering