Bottom gate thin-film transistors using parallelly lateral ZnO nanorods grown by hydrothermal method

Hsin-Ying Lee, Chun Yang Cheng, Ching Ting Lee

Research output: Contribution to journalArticle

Abstract

The 200-nm-thick aluminum zinc oxide (AZO) seed sidewall and the 1-μm-wide strips sandwiched by 3-μm-wide SiO2 barriers were utilized to grow parallelly lateral ZnO nanorods using hydrothermal method. The resulting ZnO nanorods were used for fabricating thin-film transistors. To dodge the problem of oxygen vacancies and defects resided in the ZnO nanorods, the annealing process at various temperatures was carried out. Using the measurement of photoluminescence spectra, it was estimated that the ZnO nanorods annealed in an oxygen ambience at 300 °C for 10 min had the lowest density of oxygen vacancies and defects. Consequently, its resulting thin-film transistors revealed the best performances of threshold voltage of 0.07 V, effective field-effect mobility of 63.26 cm2/V-s, transconductance of 20.1 μS and subthreshold swing of 0.44 V/dec.

Original languageEnglish
Article number105223
JournalMaterials Science in Semiconductor Processing
Volume119
DOIs
Publication statusPublished - 2020 Nov 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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