Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

K. Cheng; S. Seo; J. Faltermeier; D. Lu; T. Standaert; I. Ok; A. Khakifirooz; R. Vega; T. Levin; J. Li; J. Demarest; C. Surisetty; D. Song; H. Utomo; R. Chao; H. He; A. Madan; P. Dehaven; N. Klymko; Z. Zhu; S. Naczas; Y. Yin; J. Kuss; A. Jacob; D. Bae; K. Seo; W. Kleemeier; R. Sampson; T. Hook; B. Haran; G. Gifford; D. Gupta; H. Shang; H. Bu; M. Na; P. Oldiges; T. Wu; B. Doris; K. Rim; E. Nowak; R. Divakaruni; M. Khare

doi:10.1109/VLSIT.2014.6894390

Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

K. Cheng, S. Seo, J. Faltermeier, D. Lu, T. Standaert, I. Ok, A. Khakifirooz, R. Vega, T. Levin, J. Li, J. Demarest, C. Surisetty, D. Song, H. Utomo, R. Chao, H. He, A. Madan, P. Dehaven, N. Klymko, Z. ZhuS. Naczas, Y. Yin, J. Kuss, A. Jacob, D. Bae, K. Seo, W. Kleemeier, R. Sampson, T. Hook, B. Haran, G. Gifford, D. Gupta, H. Shang, H. Bu, M. Na, P. Oldiges, T. Wu, B. Doris, K. Rim, E. Nowak, R. Divakaruni, M. Khare

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Citations (Scopus)

Abstract

We report a novel approach to enable the fabrication of dielectric isolated FinFETs on bulk substrates by bottom oxidation through STI (BOTS). BOTS FinFET transistors are manufactured with 42nm fin pitch and 80nm contacted gate pitch. Competitive device performances are achieved with effective drive currents of I_eff (N/P) = 621/453 μA/μm at I_off = 10 nA/μm at V_DD = 0.8 V. The BOTS process results in a sloped fin profile at the fin bottom (fin tail). By extending the gate vertically into the fin tail region, the parasitic short-channel effects due to this fin tail have been successfully suppressed. We further demonstrate the extension of the BOTS process to the fabrication of strained SiGe FinFETs and nanowires, providing a path for future CMOS technologies.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479933310
DOIs	https://doi.org/10.1109/VLSIT.2014.6894390
Publication status	Published - 2014 Sept 8
Event	34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States Duration: 2014 Jun 9 → 2014 Jun 12

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	34th Symposium on VLSI Technology, VLSIT 2014
Country/Territory	United States
City	Honolulu
Period	14-06-09 → 14-06-12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2014.6894390

Cite this

Cheng, K., Seo, S., Faltermeier, J., Lu, D., Standaert, T., Ok, I., Khakifirooz, A., Vega, R., Levin, T., Li, J., Demarest, J., Surisetty, C., Song, D., Utomo, H., Chao, R., He, H., Madan, A., Dehaven, P., Klymko, N., ... Khare, M. (2014). Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates. In Digest of Technical Papers - Symposium on VLSI Technology Article 6894390 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894390

@inproceedings{9b2af4449345463a8cfec9bec3dc9d09,

title = "Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates",

abstract = "We report a novel approach to enable the fabrication of dielectric isolated FinFETs on bulk substrates by bottom oxidation through STI (BOTS). BOTS FinFET transistors are manufactured with 42nm fin pitch and 80nm contacted gate pitch. Competitive device performances are achieved with effective drive currents of Ieff (N/P) = 621/453 μA/μm at Ioff = 10 nA/μm at VDD = 0.8 V. The BOTS process results in a sloped fin profile at the fin bottom (fin tail). By extending the gate vertically into the fin tail region, the parasitic short-channel effects due to this fin tail have been successfully suppressed. We further demonstrate the extension of the BOTS process to the fabrication of strained SiGe FinFETs and nanowires, providing a path for future CMOS technologies.",

author = "K. Cheng and S. Seo and J. Faltermeier and D. Lu and T. Standaert and I. Ok and A. Khakifirooz and R. Vega and T. Levin and J. Li and J. Demarest and C. Surisetty and D. Song and H. Utomo and R. Chao and H. He and A. Madan and P. Dehaven and N. Klymko and Z. Zhu and S. Naczas and Y. Yin and J. Kuss and A. Jacob and D. Bae and K. Seo and W. Kleemeier and R. Sampson and T. Hook and B. Haran and G. Gifford and D. Gupta and H. Shang and H. Bu and M. Na and P. Oldiges and T. Wu and B. Doris and K. Rim and E. Nowak and R. Divakaruni and M. Khare",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 34th Symposium on VLSI Technology, VLSIT 2014 ; Conference date: 09-06-2014 Through 12-06-2014",

year = "2014",

month = sep,

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doi = "10.1109/VLSIT.2014.6894390",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Cheng, K, Seo, S, Faltermeier, J, Lu, D, Standaert, T, Ok, I, Khakifirooz, A, Vega, R, Levin, T, Li, J, Demarest, J, Surisetty, C, Song, D, Utomo, H, Chao, R, He, H, Madan, A, Dehaven, P, Klymko, N, Zhu, Z, Naczas, S, Yin, Y, Kuss, J, Jacob, A, Bae, D, Seo, K, Kleemeier, W, Sampson, R, Hook, T, Haran, B, Gifford, G, Gupta, D, Shang, H, Bu, H, Na, M, Oldiges, P, Wu, T, Doris, B, Rim, K, Nowak, E, Divakaruni, R & Khare, M 2014, Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates. in Digest of Technical Papers - Symposium on VLSI Technology., 6894390, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 14-06-09. https://doi.org/10.1109/VLSIT.2014.6894390

Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates. / Cheng, K.; Seo, S.; Faltermeier, J. et al.
Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894390 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

AU - Cheng, K.

AU - Seo, S.

AU - Faltermeier, J.

AU - Lu, D.

AU - Standaert, T.

AU - Ok, I.

AU - Khakifirooz, A.

AU - Vega, R.

AU - Levin, T.

AU - Li, J.

AU - Demarest, J.

AU - Surisetty, C.

AU - Song, D.

AU - Utomo, H.

AU - Chao, R.

AU - He, H.

AU - Madan, A.

AU - Dehaven, P.

AU - Klymko, N.

AU - Zhu, Z.

AU - Naczas, S.

AU - Yin, Y.

AU - Kuss, J.

AU - Jacob, A.

AU - Bae, D.

AU - Seo, K.

AU - Kleemeier, W.

AU - Sampson, R.

AU - Hook, T.

AU - Haran, B.

AU - Gifford, G.

AU - Gupta, D.

AU - Shang, H.

AU - Bu, H.

AU - Na, M.

AU - Oldiges, P.

AU - Wu, T.

AU - Doris, B.

AU - Rim, K.

AU - Nowak, E.

AU - Divakaruni, R.

AU - Khare, M.

PY - 2014/9/8

Y1 - 2014/9/8

N2 - We report a novel approach to enable the fabrication of dielectric isolated FinFETs on bulk substrates by bottom oxidation through STI (BOTS). BOTS FinFET transistors are manufactured with 42nm fin pitch and 80nm contacted gate pitch. Competitive device performances are achieved with effective drive currents of Ieff (N/P) = 621/453 μA/μm at Ioff = 10 nA/μm at VDD = 0.8 V. The BOTS process results in a sloped fin profile at the fin bottom (fin tail). By extending the gate vertically into the fin tail region, the parasitic short-channel effects due to this fin tail have been successfully suppressed. We further demonstrate the extension of the BOTS process to the fabrication of strained SiGe FinFETs and nanowires, providing a path for future CMOS technologies.

AB - We report a novel approach to enable the fabrication of dielectric isolated FinFETs on bulk substrates by bottom oxidation through STI (BOTS). BOTS FinFET transistors are manufactured with 42nm fin pitch and 80nm contacted gate pitch. Competitive device performances are achieved with effective drive currents of Ieff (N/P) = 621/453 μA/μm at Ioff = 10 nA/μm at VDD = 0.8 V. The BOTS process results in a sloped fin profile at the fin bottom (fin tail). By extending the gate vertically into the fin tail region, the parasitic short-channel effects due to this fin tail have been successfully suppressed. We further demonstrate the extension of the BOTS process to the fabrication of strained SiGe FinFETs and nanowires, providing a path for future CMOS technologies.

UR - http://www.scopus.com/inward/record.url?scp=84907691560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907691560&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2014.6894390

DO - 10.1109/VLSIT.2014.6894390

M3 - Conference contribution

AN - SCOPUS:84907691560

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 34th Symposium on VLSI Technology, VLSIT 2014

Y2 - 9 June 2014 through 12 June 2014

ER -

Cheng K, Seo S, Faltermeier J, Lu D, Standaert T, Ok I et al. Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894390. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2014.6894390

Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

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