Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus, Chien Chia Chen, Ming Jui Lee, Hsueh Hsing Liu, Jen Inn Chyi, Michael R.S. Huang, Chuan-Pu Liu, Tzu Chiao Wei, Jr Hau He, Kun Yu Lai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

Original languageEnglish
Pages (from-to)4845-4850
Number of pages6
JournalAdvanced Materials
Volume27
Issue number33
DOIs
Publication statusPublished - 2015 Sep 1

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Nanorods
Epitaxial growth
Semiconductor quantum wells
Nanostructures
Buffers
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hus, J. W., Chen, C. C., Lee, M. J., Liu, H. H., Chyi, J. I., Huang, M. R. S., ... Lai, K. Y. (2015). Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. Advanced Materials, 27(33), 4845-4850. https://doi.org/10.1002/adma.201501538
Hus, Jui Wei ; Chen, Chien Chia ; Lee, Ming Jui ; Liu, Hsueh Hsing ; Chyi, Jen Inn ; Huang, Michael R.S. ; Liu, Chuan-Pu ; Wei, Tzu Chiao ; He, Jr Hau ; Lai, Kun Yu. / Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. In: Advanced Materials. 2015 ; Vol. 27, No. 33. pp. 4845-4850.
@article{896362b08aa64efeb2012e2d3ab156d9,
title = "Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si",
abstract = "Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.",
author = "Hus, {Jui Wei} and Chen, {Chien Chia} and Lee, {Ming Jui} and Liu, {Hsueh Hsing} and Chyi, {Jen Inn} and Huang, {Michael R.S.} and Chuan-Pu Liu and Wei, {Tzu Chiao} and He, {Jr Hau} and Lai, {Kun Yu}",
year = "2015",
month = "9",
day = "1",
doi = "10.1002/adma.201501538",
language = "English",
volume = "27",
pages = "4845--4850",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "33",

}

Hus, JW, Chen, CC, Lee, MJ, Liu, HH, Chyi, JI, Huang, MRS, Liu, C-P, Wei, TC, He, JH & Lai, KY 2015, 'Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si', Advanced Materials, vol. 27, no. 33, pp. 4845-4850. https://doi.org/10.1002/adma.201501538

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. / Hus, Jui Wei; Chen, Chien Chia; Lee, Ming Jui; Liu, Hsueh Hsing; Chyi, Jen Inn; Huang, Michael R.S.; Liu, Chuan-Pu; Wei, Tzu Chiao; He, Jr Hau; Lai, Kun Yu.

In: Advanced Materials, Vol. 27, No. 33, 01.09.2015, p. 4845-4850.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

AU - Hus, Jui Wei

AU - Chen, Chien Chia

AU - Lee, Ming Jui

AU - Liu, Hsueh Hsing

AU - Chyi, Jen Inn

AU - Huang, Michael R.S.

AU - Liu, Chuan-Pu

AU - Wei, Tzu Chiao

AU - He, Jr Hau

AU - Lai, Kun Yu

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

AB - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

UR - http://www.scopus.com/inward/record.url?scp=84940707308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940707308&partnerID=8YFLogxK

U2 - 10.1002/adma.201501538

DO - 10.1002/adma.201501538

M3 - Article

VL - 27

SP - 4845

EP - 4850

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 33

ER -

Hus JW, Chen CC, Lee MJ, Liu HH, Chyi JI, Huang MRS et al. Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si. Advanced Materials. 2015 Sep 1;27(33):4845-4850. https://doi.org/10.1002/adma.201501538