Abstract
Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.
Original language | English |
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Pages (from-to) | 4845-4850 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 33 |
DOIs | |
Publication status | Published - 2015 Sept 1 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering