Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus, Chien Chia Chen, Ming Jui Lee, Hsueh Hsing Liu, Jen Inn Chyi, Michael R.S. Huang, Chuan Pu Liu, Tzu Chiao Wei, Jr Hau He, Kun Yu Lai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

Original languageEnglish
Pages (from-to)4845-4850
Number of pages6
JournalAdvanced Materials
Volume27
Issue number33
DOIs
Publication statusPublished - 2015 Sep 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si'. Together they form a unique fingerprint.

Cite this