Breakdown and stress-induced oxide degradation mechanisms in MOSFETs

J. H. Chen; C. T. Wei; S. M. Hung; S. C. Wong; Y. H. Wang

doi:10.1016/S0038-1101(02)00127-2

Breakdown and stress-induced oxide degradation mechanisms in MOSFETs

J. H. Chen, C. T. Wei, S. M. Hung, S. C. Wong, Y. H. Wang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The evolution and model of breakdown mechanisms of constant-voltage stress (CVS) and constant-current stress (CCS) are investigated and compared. The results show that for both stressing methods, the transient evolution of stress current determines the breakdown. For CVS, because the stress current decreases with time, the trapped charge and interface state density increases with stress time with a T_s^1/2βλ dependence. For CCS, due to the constant trapped charge generation rate, the trapped charge and interface state increases linearly with stress time. A passing current model for CVS has been developed to explain the breakdown mechanism and its dependence on trapped charge distribution and trapped charge density.

Original language	English
Pages (from-to)	1965-1974
Number of pages	10
Journal	Solid-State Electronics
Volume	46
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(02)00127-2
Publication status	Published - 2002 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00127-2

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title = "Breakdown and stress-induced oxide degradation mechanisms in MOSFETs",

abstract = "The evolution and model of breakdown mechanisms of constant-voltage stress (CVS) and constant-current stress (CCS) are investigated and compared. The results show that for both stressing methods, the transient evolution of stress current determines the breakdown. For CVS, because the stress current decreases with time, the trapped charge and interface state density increases with stress time with a Ts1/2βλ dependence. For CCS, due to the constant trapped charge generation rate, the trapped charge and interface state increases linearly with stress time. A passing current model for CVS has been developed to explain the breakdown mechanism and its dependence on trapped charge distribution and trapped charge density.",

author = "Chen, {J. H.} and Wei, {C. T.} and Hung, {S. M.} and Wong, {S. C.} and Wang, {Y. H.}",

note = "Funding Information: This work was supported in part by the National Science Council under contract nos. NSC 89-2219-E-006-012 and NSC 90-2215-E-006-013. The support of the foundation of Chen, Jieh–Chen scholarship, Tainan, Taiwan is also highly appreciated. ",

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language = "English",

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journal = "Solid-State Electronics",

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TY - JOUR

T1 - Breakdown and stress-induced oxide degradation mechanisms in MOSFETs

AU - Chen, J. H.

AU - Wei, C. T.

AU - Hung, S. M.

AU - Wong, S. C.

AU - Wang, Y. H.

N1 - Funding Information: This work was supported in part by the National Science Council under contract nos. NSC 89-2219-E-006-012 and NSC 90-2215-E-006-013. The support of the foundation of Chen, Jieh–Chen scholarship, Tainan, Taiwan is also highly appreciated.

PY - 2002/11

Y1 - 2002/11

N2 - The evolution and model of breakdown mechanisms of constant-voltage stress (CVS) and constant-current stress (CCS) are investigated and compared. The results show that for both stressing methods, the transient evolution of stress current determines the breakdown. For CVS, because the stress current decreases with time, the trapped charge and interface state density increases with stress time with a Ts1/2βλ dependence. For CCS, due to the constant trapped charge generation rate, the trapped charge and interface state increases linearly with stress time. A passing current model for CVS has been developed to explain the breakdown mechanism and its dependence on trapped charge distribution and trapped charge density.

AB - The evolution and model of breakdown mechanisms of constant-voltage stress (CVS) and constant-current stress (CCS) are investigated and compared. The results show that for both stressing methods, the transient evolution of stress current determines the breakdown. For CVS, because the stress current decreases with time, the trapped charge and interface state density increases with stress time with a Ts1/2βλ dependence. For CCS, due to the constant trapped charge generation rate, the trapped charge and interface state increases linearly with stress time. A passing current model for CVS has been developed to explain the breakdown mechanism and its dependence on trapped charge distribution and trapped charge density.

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EP - 1974

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Breakdown and stress-induced oxide degradation mechanisms in MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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