Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors

J. F. Chen, Y. S. Feng

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hotcarrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.

Original languageEnglish
Pages (from-to)1488-1490
Number of pages3
JournalElectronics Letters
Volume52
Issue number17
DOIs
Publication statusPublished - 2016 Aug 18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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