Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors

J. F. Chen; Y. S. Feng

doi:10.1049/el.2016.2033

Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors

J. F. Chen, Y. S. Feng

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hotcarrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.

Original language	English
Pages (from-to)	1488-1490
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	17
DOIs	https://doi.org/10.1049/el.2016.2033
Publication status	Published - 2016 Aug 18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el.2016.2033

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title = "Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors",

abstract = "The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hotcarrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.",

author = "Chen, {J. F.} and Feng, {Y. S.}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology under contact no. MOST 104-2221-E006-122. Publisher Copyright: {\textcopyright} 2016 The Institution of Engineering and Technology.",

year = "2016",

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doi = "10.1049/el.2016.2033",

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AU - Chen, J. F.

AU - Feng, Y. S.

N1 - Funding Information: This work was supported by the Ministry of Science and Technology under contact no. MOST 104-2221-E006-122. Publisher Copyright: © 2016 The Institution of Engineering and Technology.

PY - 2016/8/18

Y1 - 2016/8/18

N2 - The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hotcarrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.

AB - The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hotcarrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.

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JO - Electronics Letters

JF - Electronics Letters

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Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors

Abstract

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