The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hotcarrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering