Broad transconductance plateau region and high current GaAs/InGaAs pseudomorphic HENT's utilizing a graded InxGa1-xAs channel

W. C. Hsu, H. M. Shieh, Y. H. Wu, R. T. Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new ¿-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(HEMT) utilizing a graded In composition in InxGa1-xAs quantum well grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was demonstrated. For a gate geometry of 2 × 100 ¿m2, the studied new structure revealed superior extrinsic transconductance and saturation current density of 175 mS/mm and 500 mA/mm at 300 K respectively. The transconductance versus gate bias profile showed a flat plateau region of 2 V. High breakdown ( 10 V) and low leakage current were also observed.

Original languageEnglish
Title of host publicationESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference
EditorsJ. P. Noblanc, P. Gentil, M. Verdone, J. Borel, A. Nouailhat
PublisherIEEE Computer Society
Pages761-764
Number of pages4
ISBN (Electronic)2863321358
ISBN (Print)9782863321355
Publication statusPublished - 1993 Jan 1
Event23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France
Duration: 1993 Sep 131993 Sep 16

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other23rd European Solid State Device Research Conference, ESSDERC 1993
CountryFrance
CityGrenoble
Period93-09-1393-09-16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Hsu, W. C., Shieh, H. M., Wu, Y. H., & Hsu, R. T. (1993). Broad transconductance plateau region and high current GaAs/InGaAs pseudomorphic HENT's utilizing a graded InxGa1-xAs channel. In J. P. Noblanc, P. Gentil, M. Verdone, J. Borel, & A. Nouailhat (Eds.), ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference (pp. 761-764). [5435602] (European Solid-State Device Research Conference). IEEE Computer Society.