TY - GEN
T1 - BSIM-CG
T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
AU - Sriramkumar, V.
AU - Lu, Darsen D.
AU - Morshed, Tanvir H.
AU - Kawakami, Yukiya
AU - Lee, Peter M.
AU - Niknejad, Ali M.
AU - Hu, Chenming
PY - 2011
Y1 - 2011
N2 - A full-fledged surface potential based compact model for cylindrical gate transistors replete with physical effects such as polysilicon gate depletion, mobility degradation, quantum mechanical effects, short channel effects, leakage currents, and parasitic resistances and capacitances etc. is presented. For the first time we present calibration results of such a model to a cylindrical gate technology that exhibits asymmetric i-v characteristics.
AB - A full-fledged surface potential based compact model for cylindrical gate transistors replete with physical effects such as polysilicon gate depletion, mobility degradation, quantum mechanical effects, short channel effects, leakage currents, and parasitic resistances and capacitances etc. is presented. For the first time we present calibration results of such a model to a cylindrical gate technology that exhibits asymmetric i-v characteristics.
UR - http://www.scopus.com/inward/record.url?scp=79959923496&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959923496&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2011.5872259
DO - 10.1109/VTSA.2011.5872259
M3 - Conference contribution
AN - SCOPUS:79959923496
SN - 9781424484928
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 124
EP - 125
BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Y2 - 25 April 2011 through 27 April 2011
ER -