BSIM-CG: A compact model of cylindrical gate/nanowire MOSFETs for circuit simulations

V. Sriramkumar, Darsen D. Lu, Tanvir H. Morshed, Yukiya Kawakami, Peter M. Lee, Ali M. Niknejad, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A full-fledged surface potential based compact model for cylindrical gate transistors replete with physical effects such as polysilicon gate depletion, mobility degradation, quantum mechanical effects, short channel effects, leakage currents, and parasitic resistances and capacitances etc. is presented. For the first time we present calibration results of such a model to a cylindrical gate technology that exhibits asymmetric i-v characteristics.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages124-125
Number of pages2
DOIs
Publication statusPublished - 2011 Jul 11
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 2011 Apr 252011 Apr 27

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan
CityHsinchu
Period11-04-2511-04-27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Sriramkumar, V., Lu, D. D., Morshed, T. H., Kawakami, Y., Lee, P. M., Niknejad, A. M., & Hu, C. (2011). BSIM-CG: A compact model of cylindrical gate/nanowire MOSFETs for circuit simulations. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 124-125). [5872259] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872259