BSIM-CG: A compact model of cylindrical gate/nanowire MOSFETs for circuit simulations

Chemical Compounds

• Leakage Current 100%
• Parasitic 93%
• Surface Potential 83%
• Nanowire 66%
• Compound Mobility 58%
• Simulation 48%
• Resistance 48%

Engineering & Materials Science

• Nanowires 94%
• Circuit simulation 85%
• Surface potential 51%
• Polysilicon 43%
• Leakage currents 40%
• Capacitance 32%
• Transistors 32%
• Calibration 29%
• Degradation 26%

Physics & Astronomy

• nanowires 61%
• field effect transistors 59%
• simulation 29%
• depletion 22%
• leakage 20%
• capacitance 20%
• transistors 20%
• degradation 19%