BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

S. Venugopalan; Darsen D. Lu; Yukiya Kawakami; Peter M. Lee; Ali M. Niknejad; Chenming Hu

doi:10.1016/j.sse.2011.09.001

BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

S. Venugopalan, Darsen D. Lu, Yukiya Kawakami, Peter M. Lee, Ali M. Niknejad, Chenming Hu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

A turnkey, production circuit simulation ready compact model for cylindrical/surround gate transistors has been developed. The core of the model contains an enhanced surface potential based description of the charge in the channel. Analytical expressions for channel current and terminal charges have been derived. A method to account for quantum confinement in the cylindrical structure in a compact model framework is described. For the first time we present calibration results of such a model to a cylindrical gate technology that also exhibits asymmetric I-V characteristics.

Original language	English
Pages (from-to)	79-89
Number of pages	11
Journal	Solid-State Electronics
Volume	67
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.09.001
Publication status	Published - 2012 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2011.09.001

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abstract = "A turnkey, production circuit simulation ready compact model for cylindrical/surround gate transistors has been developed. The core of the model contains an enhanced surface potential based description of the charge in the channel. Analytical expressions for channel current and terminal charges have been derived. A method to account for quantum confinement in the cylindrical structure in a compact model framework is described. For the first time we present calibration results of such a model to a cylindrical gate technology that also exhibits asymmetric I-V characteristics.",

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AU - Niknejad, Ali M.

AU - Hu, Chenming

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AB - A turnkey, production circuit simulation ready compact model for cylindrical/surround gate transistors has been developed. The core of the model contains an enhanced surface potential based description of the charge in the channel. Analytical expressions for channel current and terminal charges have been derived. A method to account for quantum confinement in the cylindrical structure in a compact model framework is described. For the first time we present calibration results of such a model to a cylindrical gate technology that also exhibits asymmetric I-V characteristics.

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BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

Abstract

All Science Journal Classification (ASJC) codes

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