BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

S. Venugopalan, Darsen Lu, Yukiya Kawakami, Peter M. Lee, Ali M. Niknejad, Chenming Hu

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A turnkey, production circuit simulation ready compact model for cylindrical/surround gate transistors has been developed. The core of the model contains an enhanced surface potential based description of the charge in the channel. Analytical expressions for channel current and terminal charges have been derived. A method to account for quantum confinement in the cylindrical structure in a compact model framework is described. For the first time we present calibration results of such a model to a cylindrical gate technology that also exhibits asymmetric I-V characteristics.

Original languageEnglish
Pages (from-to)79-89
Number of pages11
JournalSolid-State Electronics
Volume67
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Circuit simulation
field effect transistors
simulation
Quantum confinement
Surface potential
Transistors
transistors
Calibration

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Venugopalan, S. ; Lu, Darsen ; Kawakami, Yukiya ; Lee, Peter M. ; Niknejad, Ali M. ; Hu, Chenming. / BSIM-CG : A compact model of cylindrical/surround gate MOSFET for circuit simulations. In: Solid-State Electronics. 2012 ; Vol. 67, No. 1. pp. 79-89.
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BSIM-CG : A compact model of cylindrical/surround gate MOSFET for circuit simulations. / Venugopalan, S.; Lu, Darsen; Kawakami, Yukiya; Lee, Peter M.; Niknejad, Ali M.; Hu, Chenming.

In: Solid-State Electronics, Vol. 67, No. 1, 01.01.2012, p. 79-89.

Research output: Contribution to journalArticle

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