TY - JOUR
T1 - BSIM-IMG
T2 - A compact model for ultrathin-body SOI MOSFETs with back-gate control
AU - Khandelwal, Sourabh
AU - Chauhan, Yogesh Singh
AU - Lu, Darsen D.
AU - Venugopalan, Sriramkumar
AU - Ahosan Ul Karim, Muhammed
AU - Sachid, Angada Bangalore
AU - Nguyen, Bich Yen
AU - Rozeau, Olivier
AU - Faynot, Olivier
AU - Niknejad, Ali M.
AU - Hu, Chenming Calvin
N1 - Funding Information:
Manuscript received December 17, 2011; revised April 19, 2012; accepted April 22, 2012. Date of publication June 20, 2012; date of current version July 19, 2012. This work was supported by SRC under Contract 2055.001. The review of this paper was arranged by Editor J. D. Cressler. S. Khandelwal is with the Department of Electronics and Telecommunications, Norwegian University of Science and Technology, 7034 Trondheim, Norway (e-mail: [email protected]). Y. S. Chauhan, D. D. Lu, S. Venugopalan, M. Ahosan Ul Karim, A. B. Sachid, A. M. Niknejad, and C. C. Hu are with the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1700 USA. B.-Y. Nguyen is with Soitec, Peabody, MA 01960-7911 USA (e-mail: [email protected]). O. Rozeau and O. Faynot are with LETI, CEA, 38054 Grenoble, France. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2012.2198065
PY - 2012
Y1 - 2012
N2 - In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX.
AB - In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX.
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U2 - 10.1109/TED.2012.2198065
DO - 10.1109/TED.2012.2198065
M3 - Article
AN - SCOPUS:84864766647
SN - 0018-9383
VL - 59
SP - 2019
EP - 2026
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 6221973
ER -