BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control

Sourabh Khandelwal, Yogesh Singh Chauhan, Darsen D. Lu, Sriramkumar Venugopalan, Muhammed Ahosan Ul Karim, Angada Bangalore Sachid, Bich Yen Nguyen, Olivier Rozeau, Olivier Faynot, Ali M. Niknejad, Chenming Calvin Hu

Research output: Contribution to journalArticlepeer-review

68 Citations (Scopus)

Abstract

In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX.

Original languageEnglish
Article number6221973
Pages (from-to)2019-2026
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume59
Issue number8
DOIs
Publication statusPublished - 2012 Jun 27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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