Abstract
BSIM-IMG is a Turnkey, Production Ready model Will be submitted to the CMC for standardization Physical, Scalable Core Model for FDSOI devices Plethora of Real Device Effects modeled Advanced Device Effects-Quantum, Back-gate bias, Self-heating Validated on Hardware Data from two FDSOI/UTBSOI technologies Available in major EDA tools.
| Original language | English |
|---|---|
| Title of host publication | 2012 IEEE International SOI Conference, SOI 2012 |
| DOIs | |
| Publication status | Published - 2012 Dec 1 |
| Event | 2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States Duration: 2012 Oct 1 → 2012 Oct 4 |
Publication series
| Name | Proceedings - IEEE International SOI Conference |
|---|---|
| ISSN (Print) | 1078-621X |
Other
| Other | 2012 IEEE International SOI Conference, SOI 2012 |
|---|---|
| Country | United States |
| City | Napa, CA |
| Period | 12-10-01 → 12-10-04 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
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BSIM-IMG : A Turnkey compact model for fully depleted technologies. / Hu, Chenming; Niknejad, Ali; Sriramkumar, V.; Lu, Darsen; Chauhan, Yogesh; Kahm, Muhammed; Sachid, Angada.
2012 IEEE International SOI Conference, SOI 2012. 2012. 6404352 (Proceedings - IEEE International SOI Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - BSIM-IMG
T2 - A Turnkey compact model for fully depleted technologies
AU - Hu, Chenming
AU - Niknejad, Ali
AU - Sriramkumar, V.
AU - Lu, Darsen
AU - Chauhan, Yogesh
AU - Kahm, Muhammed
AU - Sachid, Angada
PY - 2012/12/1
Y1 - 2012/12/1
N2 - BSIM-IMG is a Turnkey, Production Ready model Will be submitted to the CMC for standardization Physical, Scalable Core Model for FDSOI devices Plethora of Real Device Effects modeled Advanced Device Effects-Quantum, Back-gate bias, Self-heating Validated on Hardware Data from two FDSOI/UTBSOI technologies Available in major EDA tools.
AB - BSIM-IMG is a Turnkey, Production Ready model Will be submitted to the CMC for standardization Physical, Scalable Core Model for FDSOI devices Plethora of Real Device Effects modeled Advanced Device Effects-Quantum, Back-gate bias, Self-heating Validated on Hardware Data from two FDSOI/UTBSOI technologies Available in major EDA tools.
UR - http://www.scopus.com/inward/record.url?scp=84873549776&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873549776&partnerID=8YFLogxK
U2 - 10.1109/SOI.2012.6404352
DO - 10.1109/SOI.2012.6404352
M3 - Conference contribution
SN - 9781467326919
T3 - Proceedings - IEEE International SOI Conference
BT - 2012 IEEE International SOI Conference, SOI 2012
ER -